Dependence of Ba(Zr0.15Ti0.85)O3 films growth on substrate temperature and oxygen gas pressure prepared by pulsed laser deposition
Source abstract
Abstract
Ferroelectric Ba(Zr0.15Ti0.85)O3 (BZT) thin films were deposited on Pt/Ti/SiO2/Si substrates using Pulsed Laser Deposition technique. The effect of processing parameters such as substrate temperature and oxygen gas pressure on the structural properties of the films was analyzed. The experimental results showed that the films deposited at substrate temperature ≥600 °C, exhibited crystalline nature corresponding to perovskite phase structure. The mechanism explaining the dependence of the crystallinity of the BZT films on the substrate temperature is discussed. AFM data show the dependence of grain growth on oxygen partial pressure of the BZT thin films. The films deposited at 200 mT were found to have an average grain size of about 40 nm. The results were found to be in accordance with SEM analysis. Raman scattering spectral data were used to characterize the phonon modes of the BZT films at room temperature. Raman studies reveal the occurrence of multiple phases corresponding to the pinched-phase transition, reported to be possessed by the composition under study.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Microwave Dielectric Ceramics Synthesis
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