Field emission current from a junction field-effect transistor
Source abstract
Abstract
Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Diamond and Carbon-based Materials Research · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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