Fabrication of NiS decorated hollow SnS nano-belts based photodiode for enhanced optoelectronic applications
Source abstract
Abstract
The physical, chemical, and electrical properties of materials are influenced by the shape, size, and surface morphology such as rod, core-shell, network, and flowers. Herein, hollow nano-belt SnS/NiS composite structure was synthesized by the high-temperature wet chemical method in the presence of as-synthesized SnS as seed, and its photoresponse was evaluated by fabricating P-N junction photodiode using n-type Si substrate. Phases that are presented in the synthesized samples were characterized by powder diffraction method. Morphology of SnS and hollow nano-belt formation in SnS/NiS was confirmed by transmission electron microscopy. The solution-processed photodiode was fabricated using synthesized p-type SnS and SnS/NiS on n-Si substrate, and photoresponse was compared with each other. Observed photodiode results revealed that hollow nano-belt based p-SnS/NiS/n-Si photodiode has better photoresponsivity 98.95 mA/W than photodiode fabricated using bare SnS sample. Also, its photosensitivity (275.989% at 3 V), EQE (38.371%), and D* (2.0080 × 1010 Jones) are noticed to be higher when compared with p-SnS/n-Si diode. The enhanced values of fabricated diode make it suitable for high photodetection applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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