Strain Directed Assembly of Nanoparticle Arrays Within a Semiconductor
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OpenAlex topics: Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices
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References (25)
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1. Alivisatos A.P., 1996. Perspectives on the physical chemistry of semiconductor nanocrystals. J. Phys. Chem. 100, 13226–13239.10.1021/jp9535506 ↗
2. Baker S.P. & W.D. Nix, 1990. Mechanical properties of thin films on substrates. SPIE Optical Thin Films III: New Developments, 263.10.1117/12.22398 ↗
3. Bliss D.E., W. Walukiewicz, I.J.W. Ager, E.E. Haller, K.T. Chan & S. Tanigawa, 1992. Annealing studies of low-temperaturegrown GaAs: Be. J. Appl. Phys. 71, 1699.10.1063/1.351200 ↗
4. Claverie A. & Z. Liliental-Weber, 1992. Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy. Philos. Mag. A 65, 981.10.1080/01418619208205601 ↗
5. Fleischer R.L., 1961. Solution hardening. Acta Metallurgica 9(11), 996.10.1016/0001-6160(61)90242-5 ↗
6. Hung C.-Y., J.S. Harris, A.F. Marshall & R.A. Kiehl, 1997. Arsenic Precipitation in GaAs for Single-electron Tunneling Applications. Intl. Symp. Compound Semiconductors, San Diego, Calif.10.1109/ISCS.1998.711598 ↗
7. Hung C.-Y., J.S. Harris, A.F. Marshall & R.A. Kiehl, 1998. Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers. Appl. Phys. Lett. 73(3), 330–332.10.1063/1.121824 ↗
8. Ibbetson J.P., J.S. Speck, N.X. Nguyen & A.C. Gossard, 1993. The role of microstructure in the electrical properties of GaAs grown at low temperature. J. Electronic Materials 22, 1421–1424.10.1007/BF02649990 ↗
9. Kaminska M., Z. Liliental-Weber, E.R. Weber, T. George, J.B. Kortright, F.W. Smith, B.Y. Tsaur & A.R. Calawa, 1989. Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures. Appl. Phys. Lett. 54, 1881.10.1063/1.101229 ↗
10. Kiehl R.A., M. Saito, M. Yamaguchi, O. Ueda & N. Yokoyama, 1995. Lateral patterning of arsenic precipitates in GaAs by a surface stress structure. Appl. Phys. Lett. 66, 2194.10.1063/1.113944 ↗
11. Kiehl R.A., M. Yamaguchi, O. Ueda, N. Horiguchi & N. Yokoyama, 1996. Patterned self-assembly of onedimensional arsenic particle arrays in GaAs by controlled precipitation. Appl. Phys. Lett. 68(4), 478–480.10.1063/1.116419 ↗
12. Lifshitz I.M. & V.V. Slyozov, 1961. J. Phys. Chem. Solids 19, 35.10.1016/0022-3697(61)90054-3 ↗
13. Likharev K.K., 1999. Single-electron devices and their applications. Proc. IEEE 87(April), 633–651.10.1109/5.752518 ↗
14. Liliental-Weber Z., G. Cooper, J.R. Mariella & C. Kocot, 1991. The role of As in molecular-beam epitaxy GaAs layers grown at low temperature. J. Vac. Sci. Technol. B 9, 2323.10.1116/1.585741 ↗
15. Liu X., A. Prasad, J. Nishio, E.R. Weber, Z. Liliental-Weber & W. Walukiewicz, 1995. Native point defects in low-temperature-grown GaAs. Appl. Phys. Lett. 67, 279.10.1063/1.114782 ↗
16. Look D.C., D.C. Walters, M.O. Manasreh, J.R. Sizelove, C.E. Stutz & K.R. Evans, 1990. Anomalous Hall-effect results in low-temperature molecular beam epitaxial GaAs: hopping in a dense EL2-like band. Phys. Rev. B 42, 3578.10.1103/PhysRevB.42.3578 ↗
17. Mahalingam K., N. Ostsuka, M.R. Melloch, J.M. Woodall & A.C. Warren, 1992. Arsenic precipitate accumulation and depletiion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy. J. Vac. Sci. Technol. B 10, 812.10.1116/1.586122 ↗
18. MARC, 1988. MARC finite element program. Palo Alto, CA, MARC Analysis Research Corporation.
19. Melloch M.R., N. Otsuka, K. Mahalingam, A.C. Warren, J.M. Woodall & P.D. Kirchner, 1992. Incorporation of excess arsenic in GaAs and AlGaAs epilayers grown at low substrate temperatures by molecular beam epitaxy. Mater. Res. Soc. Sym. Proc. 241, 113.10.1557/PROC-241-113 ↗
20. Neuberger M., 1971. Handbook of Electronic Materials, IFI/Plenum Data Corporation.10.1007/978-1-4684-7917-1 ↗
21. Porter D.A. & K.E. Easterling, 1991. Phase Transformation in Metals and Alloys, Chapman and Hall, International Publications.
22. Timoshenko S.P. & J.N. Goodier, 1970. Theory of Elasticity, McGraw-Hill Book Company.
23. Walle C.G. V.d., 1989. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B 39, 1871.10.1103/PhysRevB.39.1871 ↗
24. Xu Z. & P.M. Petroff, 1991. Strain-induced carrier confinement in a buried stressor structure. J. Appl. Phys. 69, 6564.10.1063/1.348867 ↗
25. Yu K.M., M. Kaminska & Z. Liliental-Weber, 1992. Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques. J. Appl. Phys. 72, 2850.10.1063/1.351538 ↗