Single electron effects in silicon quantum devices
Source abstract
Abstract
The integration of atomic physics with quantum device technology contributed to the exploration of the field of single electron nanoelectronics originally developed in single electron quantum dots. Here the basic concepts of single electron nanoelectronics, including key aspects of architectures, quantum transport in silicon devices, single electron transistors, few atom devices, single charge/spin dynamics, and the role of valleys and bands are reviewed. Future applications in fundamental physics and classical and quantum information technologies are discussed, by highlighting the critical aspects which currently impose limits to the most advanced developments at the 10-nm node.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Quantum-Dot Cellular Automata
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (81)
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1. Akazawa M, Kanaami K, Yamada T, Amemiya Y (1999) Multiple-valued inverter using a single-electron-tunneling circuit. IEICE Trans Elec E82-C:1607–1614
2. Amarasinghe NV, Celik-Butler Z (2001) Bimodal counting statistics in single-electron tunneling through a quantum dot. Phys Rev B 76:5526–5532
3. Beenakker CWJ (1991) Theory of coulomb-blockade oscillations in the conductance of a quantum dot. Phys Rev B 44:1646–165610.1103/PhysRevB.44.1646 ↗
4. Castro C, Schamm-Chardon S, Pecassou B, Andreozzi A, Seguini G, Perego M, BenAssayag G (2013) In-plane organization of silicon nanocrystals embedded in SiO2 thin films. Nanotechnology 24:07530210.1088/0957-4484/24/7/075302 ↗
5. De Michielis M, Prati E, Fanciulli M, Fiori G, Iannaccone G (2012) Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation. Appl Phys Express 5:110.1143/APEX.5.124001 ↗
6. Deng G, Chen C (2011) A hybrid CMOS-SET multiplier using frequency modulation. IEEE-NANO 2011:1167–1170
7. Escott CC, Zwanenburg FA, Morello A (2010) Resonant tunnelling features in quantum dots. Nanotechnology 21:274018–27402910.1088/0957-4484/21/27/274018 ↗
8. Fricke C, Hohls F, Wegscheider W, Haug RJ (2007) Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal-oxide-semiconductor field-effect transistors. Appl Phys Lett 89 10:155307
9. Friesen M, Eriksson MA, Coppersmith SN (2006) Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells . Appl Phys Lett 89:20210610.1063/1.2387975 ↗
10. Friesen M, Chutia S, Tahan C, Coppersmith SN (2007) Valley splitting theory of SiGe/Si/SiGe quantum wells. Phys Rev B 75:11531810.1103/PhysRevB.75.115318 ↗
11. Friesen M, Coppersmith SN (2010) Theory of valley-orbit coupling in a Si/SiGe quantum dot. Phys Rev B 81:11532410.1103/PhysRevB.81.115324 ↗
12. Frucci G, di Gaspare L, Evangelisti F, Giovine E, Notarigiacomo A, Piazza V, Beltram F (2010) Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures. Phys Rev B 81:19531110.1103/PhysRevB.81.195311 ↗
13. Fujiwara A, Nishiguchi K, Ono Y (2008) Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor. Appl Phys Lett 92:04210210.1063/1.2837544 ↗
14. Gautier J, Jehl X, Sanquer M (2009) Single electron devices and applications. In: Deleonibus S (ed) Electronic device architecture for the nano-CMOS era, chap 10. Panstanford Publishing, Singapore, pp 279–297
15. Goswami S, Slinker KA, Friesen M, McGuire LM, Truitt JL, Tahan C, Klein LJ, Chu JO, Mooney PM, Van Dreweide DW, Joynt R, Coppersmith SN, Eriksson MA (2006) Controllable valley splitting in silicon quantum devices. Nature Phys 3:4110.1038/nphys475 ↗
16. Hada Y, Eto M (2003) Electronic states in silicon quantum dots: multivalley artificial atoms. Phys Rev B 68:15532210.1103/PhysRevB.68.155322 ↗
17. Hanson R, Kouwenhoven LP, Petta JR, Tarucha S, Vandersypen LMK (2007) Spins in few electron quantum dots. Rev Mod Phys 79 4:1217–126510.1103/RevModPhys.79.1217 ↗
18. Henry CH, Lang DV (1977) Nonradiative capture and recombination by multiphonon emission in GaAs and GaP. Phys Rev B 15:98910.1103/PhysRevB.15.989 ↗
19. International Technology Roadmap for Semiconductors (2011) Emerging research materials, Edn 2011, chap 6. http://www.itrs.net/Links/2011ITRS/2011Chapters/2011ERM.pdf . Accessed 4 April 2013
20. Jamieson DN, Yang C, Hopf T, Hearne SM, Pakes CI, Prawer S, Mitic M, Gauja E, Andresen SE, Hudson FE, Dzurak AS, Clark RG (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions. Appl Phys Lett 86:20210110.1063/1.1925320 ↗
21. Kandiah K, Deighton MO, Whiting FB (1989) A physical model for random telegraph signal currents in semiconductor devices. J Appl Phys 66:93710.1063/1.343523 ↗
22. Kane BE (1998) A silicon-based nuclear spin quantum computer. Nature 393:133–13710.1038/30156 ↗
23. Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt AG De Franceschi S (2010) Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nat Nano 5:458–46410.1038/nnano.2010.84 ↗
24. Kouwenhoven LP, Austing DG, Tarucha S (2010) Electron transport through double quantum dots. Rep Prog Phys 64:701–73610.1088/0034-4885/64/6/201 ↗
25. Lansbergen GP, Rahman R, Wellard CJ, Woo I, Caro J, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S (2008) Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET. Nat Phys 4:65610.1038/nphys994 ↗
26. Lansbergen GP, Tettamanzi GC, Verduijn J, Collaert N, Biesemans S, Blaauboer M, Rogge S (2010) Tunable Kondo effect in a single donor atom. Nano Lett 10:455–46010.1021/nl9031132 ↗
27. Lansbergen GP, Ono Y, Fujiwara A (2012) Donor-based single electron pumps with tunable donor binding energy. Nano Lett 12:763–76810.1021/nl203709d ↗
28. Leti G, Prati E, Belli M, Petretto G, Fanciulli M, Wacquez R, Vinet M, Sanquer M (2011) Switching quantum transport in a three donors silicon Fin-field effect transistor. Appl Phys Lett 99:24210210.1063/1.3669702 ↗
29. Ligowski M, Moraru D, Anwar M, Mizuno T, Jablonski R, Tabe M (2008) Observation of individual dopants in a thin silicon layer by low temperature Kelvin probe force microscope. Appl Phys Lett 93:14210110.1063/1.2992202 ↗
30. Likarev K, Strukov D (2005) In: Cuniberti G (ed) Introduction to molecular electronics. Springer, Berlin (2005)
31. Lim WH, Yang CH, Zwanenburg FA, Dzurak AS (2011) Spin filling of valley-orbit states in a silicon quantum dot. Nanotechnology 22:33570410.1088/0957-4484/22/33/335704 ↗
32. Liu HW, Fujisawa T, Ono Y, Inokawa H, Fujiwara A, Takashina K, Hirayama Y (2008) Pauli-spin-blockade transport through a silicon double quantum dot. Phys Rev B 77:07331010.1103/PhysRevB.77.073310 ↗
33. Mahapatra S, Bch H, Simmons MY (2011) Charge sensing of precisely positioned P donors in Si. Nano Lett 11:437610.1021/nl2025079 ↗
34. Maune BM, Borselli MG, Huang B, Ladd TD, Deelman PW, Holabird KS, Kiselev AA, Alvarado-Rodriguez I, Ross RS, Schmitz AE, Sokolich M, Watson CA, Gyure MF, Hunter AT (2012) Coherent singlet-triplet oscillations in a silicon-based double quantum dot. Nature 481:34410.1038/nature10707 ↗
35. Mazzeo G, Prati E, Belli M, Leti G, Cocco S, Fanciulli M, Guagliardo F, Ferrari G (2012) Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon. Appl Phys Lett 100:21310710.1063/1.4721433 ↗
36. Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M (2011) Atom devices based on single dopants in silicon nanostructures. Nano Res Lett 6:47910.1186/1556-276X-6-479 ↗
37. Morello A, Escott CC, Huebl H, Willems van Beveren LH, Hollenberg LCL, Jamieson DN, Dzurak AS, Clark RG (2009) Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon. Phys Rev B 80:081307(R)10.1103/PhysRevB.80.081307 ↗
38. Morello A, Pla JJ, Zwanenburg FA, Chan KW, Tan KY, Huebl H, Mttnen M, Nugroho CD, Yang C, van Donkelaar JA, Alves ADC, Jamieson DN, Escott CC, Hollenberg LCL, Clark RG, Dzurak AS (2010) Single-shot readout of an electron spin in silicon. Nature 467:68710.1038/nature09392 ↗
39. Nordberg EP , Stalford HL, Young R, Ten Eyck GA, Eng K, Tracy LA, Childs KD, Wendt JR, Grubbs RK, Stevens J, Lily MP, Eriksson MA, Carroll MS (2009) Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots. Appl Phys Lett 95:20210210.1063/1.3259416 ↗
40. Palma A, Godoy A, Jimnez-Tejada JA, Carceller JE, Lpez-Villanueva JA (1997) Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide semiconductor structures. Phys Rev B 56:956510.1103/PhysRevB.56.9565 ↗
41. Pauliac-Vaujour S, Wacquez R, Vizioz C, Chevolleau T, Pierre M, Previtali B, Comboroure C, Bove N, Roche B, Vinet M, Jehl X, Sanquer M, Sixt P (2011) Patterning strategy for monoelectronic device platform in a complementary metal oxide semiconductor technology. Jpn J Appl Phys 50:06GF1510.1143/JJAP.50.06GF15 ↗
42. Pierre M, Jehl X, Sanquer M, Vinet M, Previtali B, Molas G, Deleonibus S (2008) Low noise silicon CMOS single-electron transistors and electron pumps. In: Conference of precision electromagnetic measurements digest, pp 282–28310.1109/CPEM.2008.4574763 ↗
43. Pierre M, Wacquez R, Roche B, Jehl X, Sanquer M, Vinet M, Prati E, Belli M, Fanciulli M (2009) Compact silicon double and triple dots realized with only two gates. Appl Phys Lett 95:24210710.1063/1.3273857 ↗
44. Pierre M, Wacquez R, Jehl X, Sanquer M, Vinet M, Cueto O (2009) Single-donor ionization energies in a nanoscale CMOS channel. Nat Nano 5:13310.1038/nnano.2009.373 ↗
45. Pla JJ, Tan KY, Dehollain JP, Lim WH, Morton JJL, Jamieson DN, Dzurak AS, Morello A (2012) A single-atom electron spin qubit in silicon. Nature 489:54110.1038/nature11449 ↗
46. Prati E (2010) The finite quantum grand canonical ensemble and temperature from single-electron statistics for a mesoscopic device. J Stat Mech 1:P01030
47. Prati E (2011) Valley blockade quantum switching in silicon nanostructures. J Nano Nanotech 11:1–5
48. Prati E, Fanciulli M (2008) Manipulation of localized charge states in n-MOSFETs with microwave irradiation. Phys Lett A 372:3102–310410.1016/j.physleta.2008.01.039 ↗
49. Prati E, Fanciulli M, Ferrari G, Sampietro M (2006) Effect of the triplet state on the random telegraph signal in Si n-MOSFETs. Phys Rev B 74:03330910.1103/PhysRevB.74.033309 ↗
50. Prati E, Fanciulli M, Calderoni A, Ferrari G, Sampietro M (2007) Microwave irradiation effects on random telegraph signal in a MOSFET. Phys Lett A 370:491–49310.1016/j.physleta.2007.05.086 ↗
51. Prati E, Fanciulli M, Ferrari G, Sampietro M, (2008a) Giant random telegraph signal generated by single charge trapping in sub-micron n-MOSFETs. J Appl Phys 103:12370710.1063/1.2939272 ↗
52. Prati E, Fanciulli M, Calderoni A, Ferrari G, Sampietro M (2008b) Effects of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor field effect transistors. J Appl Phys 103:10450310.1063/1.2924409 ↗
53. Prati E, Latempa R, Fanciulli M (2009) Microwave assisted transport in a single donor silicon quantum dot. Phys Rev B 80:16533110.1103/PhysRevB.80.165331 ↗
54. Prati E, Belli M, Fanciulli M, Ferrari G (2010) Measuring the temperature of a mesoscopic electron system by means of single electron statistics. Appl Phys Lett 96:11310910.1063/1.3365204 ↗
55. Prati E, Belli M, Cocco S, Petretto G, Fanciulli M (2011) Adiabatic charge control in a single donor atom transistor. Appl Phys Lett 98:05310910.1063/1.3551735 ↗
56. Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M (2012a) Few electron limit of n-type metal oxide semiconductor single electron transistors. Nanotechnology 23:21520410.1088/0957-4484/23/21/215204 ↗
57. Prati E, Hori M, Guagliardo F, Ferrari G, Shinada T (2012b) Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor. Nature Nano 7:443–44710.1038/nnano.2012.94 ↗
58. Ralls KS, Skocpol WJ, Jackel LD, Howard RE, Fetter LA, Epworth RW, Tennant DM (1984) Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f?) noise. Phys Rev Lett 52:22810.1103/PhysRevLett.52.228 ↗
59. Ray V, Subramanian R, Bhadrachalm P, Ma LC, Kim CU, Koh SJ (2008) CMOS-compatible fabrication of room temperature single-electron devices. Nat Nano 3:603–60810.1038/nnano.2008.267 ↗
60. Schenkel T, Persaud A, Park SJ, Nilsson J, Bokor J, Liddle JA, Keller R, Schneider DH, Cheng DW, Humphries DE (2003) Solid state quantum computer development in silicon with single ion implantation. J Appl Phys 94:7017–702410.1063/1.1622109 ↗
61. Scherer H, Camarota B (2012) Quantum metrology triangle experiments: a status review. Meas Sci Technol 23:12401010.1088/0957-0233/23/12/124010 ↗
62. Scofield JH, Borland N, Fleetwood DM (2000) Temperature-independent switching rates for a random telegraph signal in a silicon metal oxide semi-conductor field-effect transistor at low temperatures. Appl Phys Lett 76:3248–325010.1063/1.126596 ↗
63. Sellier H, Lansbergen GP, Caro J, Rogge S, Collaert N, Ferain I, Jurczak M, Biesemans S (2006) Transport spectroscopy of a single dopant in a gated silicon nanowire. Phys Rev Lett 97:20680510.1103/PhysRevLett.97.206805 ↗
64. Shin SJ, Jung CS, Park BJ, Yoon TK, Lee JJ, Kim SJ, Choi JB, Takahashi Y, Hasko DG (2010) Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature. Appl Phys Lett 97:10310110.1063/1.3483618 ↗
65. Shin SJ, Lee JJ, Kang HJ, Choi JB, Yang SRE, Takahashi Y, Hasko DG (2011) Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island. Nano Lett 11:1591–159710.1021/nl1044692 ↗
66. Shinada T, Okamoto S, Kobayashi T, Ohdomari I (2005) Enhancing semiconductor device performance using ordered dopant arrays. Nature 437:1128–113110.1038/nature04086 ↗
67. Shinada T, Kurosawa T, Nakayama H, Zhu Y, Hori M, Ohdomari I (2008) A reliable method for the counting and control of single ions for single-dopant controlled devices. Nanotechnology 19:34520210.1088/0957-4484/19/34/345202 ↗
68. Shinada T, Hori M, Guagliardo F, Ferrari G, Komatubara A, Kumagai K, Tanii T, Endo T, Ono Y, Prati E (2011) Quantum transport in deterministically implanted single-donors in Si FETs. In: 2011 IEEE international electron devices meeting (IEDM), 5–7 December, pp 30.4.1–30.4.410.1109/IEDM.2011.6131644 ↗
69. Simmons CB, Thalakulam M, Shaji N, Klein LJ, Qin H, Blick R, Savage DE, Lagally MG, Coppersmith SN, Eriksson MA (2007) Single-electron quantum dot in Si/SiGe with integrated charge sensing. Appl Phys Lett 91:21310310.1063/1.2816331 ↗
70. Simmons CB, Thalakulam M, Rosemeyer BM, Van Bael BJ, Sackmann EK, Savage EK, Lagally MG, Joynt R, Friesen M, Coppersmith SN (2009) Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot. Nano Lett. 9:323410.1021/nl9014974 ↗
71. Song K-W, Lee YK, Sim JS, Kim KR, Lee JD, Park B-G, You YS, Park J-O, Jin YS, Kim Y-W (2005) Complementary self-biased logics based on single-electron transistor (SET)/CMOS hybrid process. Jpn J Appl Phys 44:2618–2622
72. Tabe M, Moraru D, Ligowski M, Anwar M, Yokoi K, Jablonski R, Mizuno T (2010) Observation of discrete dopant potential and its application to Si single electron devices. Thin Solid Films 518:S38–S4310.1016/j.tsf.2009.10.051 ↗
73. Tan KY, Chan KW, Möttönen M, Morello A, Yang C, van Donkelaar J, Alves A, Pirkkalainen JM, Jamieson DN, Clark RG, Dzurak AS (2010) Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor. Nano Lett 10:11–1510.1021/nl901635j ↗
74. Thomas GA, Capizzi M, DeRosa F, Bhatt RN, Rice MT (1981) Optical study of interacting donors in semiconductors. Phys Rev B 23 10:5471–439410.1103/PhysRevB.23.5472 ↗
75. Uchida K, Tanamoto T, Ohba R, Yasuda SI, Fujita S (2002) Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications. In: IEDM technical digest, pp 177–18010.1109/IEDM.2002.1175807 ↗
76. van den Brom HE et al (2003) Counting electrons one by one-overview of a joint European research project. IEEE TIM 52:584–588
77. Vogel E (2007) Technology and metrology of new electronic materials and devices. Nat Nano 2:25–3210.1038/nnano.2006.142 ↗
78. Vrijen R, Yablonovitch E, Wang K, Jiang HW, Balandin A, Roychowdhury V, Mor T, DiVincenzo D (2000) Electron-spin-resonance transistors for quantum computing in silicon–germanium heterostructures. Phys Rev A 62:1230610.1103/PhysRevA.62.012306 ↗
79. Xiao M, Martin I, Jiang HW (2003) Probing the spin state of a single electron trap by random telegraph signal. Phys Rev Lett 91:07830110.1103/PhysRevLett.91.078301 ↗
80. Xiao M, House MG, Jiang HW (2010) Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots. Appl Phys Lett 97:3
81. Yang CH, Lim WH, Zwanenburg FA, Dzurak AS (2011) Dynamically controlled charge sensing of a few-electron silicon quantum dot. AIP Advances 1:04211110.1063/1.3654496 ↗