Microwave Heating Characteristic of Multilayered Structures in a Slngle-Mode Cavity

In this study, nonconductor (PZT), semiconductor (Si) and conductor (Pt/Ti) whose permittivity and permeability are distinctive are prepared into various multilayered structures for exploring the heating behavior of microwave (2.45 Hz) in a single-mode cavity. The heating efficiency of the semiconductor and conductor was much higher at the maximum of H field than that of E field. At the H maximum, the Si layer was useful to generate high temperature and the Pt/Ti accelerated the heating rate. At the E maximum, the Si layer was also in favor of obtaining high temperature, but the Pt/Ti layer partially suppressed the microwave heating. The effect of PZT on the heating processing was not obviously observed at the maximum of both H and E fields.