journal article·2019-03Open access

Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory

Chungang Duan

Journal of Materiomics· Volume 5· Issue 1

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Underwater Acoustics Research

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References (8)

Show source-provided references
1. Buck · 1952
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6. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories10.1038/nmat5028 ↗
7. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states10.1126/sciadv.1700919 ↗
8. Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls10.1038/s41565-018-0204-1 ↗