journal article·2015-09Open access

Orientation and film thickness dependencies of (100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films grown by metal organic chemical vapor deposition

Hiroshi Funakubo, Satoshi Okamaoto, Shintaro Yokoyama, Shoji Okamoto, Junichi Kimura, Hiroshi Uchida

Journal of Materiomics· Volume 1· Issue 3

Abstract

(100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films with 500 and 1300 nm in thickness were grown by metal organic chemical vapor deposition. Remained strain was almost relaxed because the crystal structure of the films was almost the same as that of bulk Pb(Mg1/3Nb2/3)O3. Relative dielectric constant showed the maximum value against the temperature that depended on the measurement frequency. Maximum relative dielectric constant, εr(max.), and the temperature showing εr(max.), T(max.), decreased and increased with the frequency, respectively, are in good agreement with reported data for the bulk. εr(max.) and T(max.), respectively increased and decreased with the film thickness and (111)-oriented films showed larger value than that of the (100)-oriented one. Ferroelectricity was observed for all films up to 297 K and monotonously decreased with increasing temperature. Saturation polarization value increased with the film thickness and (111)-oriented films showed larger value than (100)-oriented ones. On the other hand, the coercive field decreased with increasing film thickness, but was almost independent with the film orientation.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (15)

Show source-provided references
1. Relaxor Pb(Mg1/3Nb2/3)O3: a ferroelectric with multiple inhomogeneities10.1103/PhysRevLett.103.207601 ↗
2. Crystallographic dependence of loss in domain engineered relaxor-PT single crystals10.1063/1.3125431 ↗
3. Giant piezoelectricity on Si for hyperactive MEMS10.1126/science.1207186 ↗
4. Antiphase-type planar defects in Pb(Mg1/3Nb2/3-δ) O3/SrTiO3 thin films10.1063/1.1710714 ↗
5. Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3) O3(90%)–PbTiO3(10%) relaxor thin films10.1063/1.125576 ↗
6. Strong dependence on thickness of room-temperature dielectric constant of (100)-oriented Pb(Mg1/3Nb2/3)O3 epitaxial films grown by metal organic chemical vapor deposition10.1143/JJAP.45.L1074 ↗
7. Ferroelectricity in thin films: the dielectric response of fiber-textured (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition10.1063/1.371404 ↗
8. Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr/(Zr+Ti) ratio10.1063/1.2126156 ↗
9. Stationary domain wall contribution to enhanced ferroelectric susceptibility10.1038/ncomms4120 ↗
10. Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition10.1143/JJAP.39.L996 ↗
11. Crystal structure comparison between conductive SrRuO3 and CaRuO3 thin films10.1016/S0022-0248(01)01201-5 ↗
12. Ismailzade · Sov Phys Crystallogr · 1960 · 5 · 292
13. Krainik · Fiz Tverd Tela · 1983 · 25 · 359
14. Dielectric behavior of the relaxor Pb(Mg1/3Nb2/3)O3—PbTiO3 solid-solution system in the microwave region10.1111/j.1151-2916.1989.tb06158.x ↗
15. Schmidt · Krist Tech · 1980 · 15 · 141510.1002/crat.19800151219 ↗