Ferroelectric engineering of two-dimensional group-IV monochalcogenides: The effects of alloying and strain
Source abstract
Abstract
• The stability and ferroelectricity of nine 2D group-IV monochalcogenides in two competing crystal structures have been studied. • It is found that these compounds can be divided into three groups according to their stability and ferroelectricity. • Pb-doping and equibiaxial strain are found to be effective in stabilizing the rippled phases to achieve ferroelectricity.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Multiferroics and related materials
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References (26)
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1. Ferroelectric thin films for micro-sensors and actuators: a review10.1088/0960-1317/10/2/307 ↗
2. Ferroelectric zinc oxide nanowire embedded flexible sensor for motion and temperature sensing10.1021/acsami.7b00380 ↗
3. Ferroelectric memories10.1126/science.246.4936.1400 ↗
4. Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film10.1038/s41598-017-09533-2 ↗
5. Ferroelectricity in ultrathin perovskite films10.1126/science.1098252 ↗
6. Critical thickness for ferroelectricity in perovskite ultrathin films10.1038/nature01501 ↗
7. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe10.1126/science.aad8609 ↗
8. Synthesis and applications of two-dimensional hexagonal boron nitride in electronics manufacturing10.1007/s13391-015-5308-2 ↗
9. Thermal transport and anharmonic phonons in strained monolayer hexagonal boron nitride10.1038/srep43956 ↗
10. 2D transition metal dichalcogenides10.1038/natrevmats.2017.33 ↗
11. Black phosphorus field-effect transistors10.1038/nnano.2014.35 ↗
12. Growth of 2D black phosphorus film from chemical vapor deposition10.1088/0957-4484/27/21/215602 ↗
13. Intrinsic ferroelasticity and/or multiferroicity in two-dimensional phosphorene and phosphorene analogues10.1021/acs.nanolett.6b00726 ↗
14. Two-dimensional multiferroics in monolayer group IV monochalcogenides10.1088/2053-1583/4/1/015042 ↗
15. Polarization and valley switching in monolayer group-IV monochalcogenides10.1103/PhysRevB.94.035304 ↗
16. Ferroelectricity and Phase transitions in monolayer group-IV monochalcogenides10.1103/PhysRevLett.117.097601 ↗
17. Large bulk photovoltaic effect and spontaneous polarization of single-layer monochalcogenides10.1103/PhysRevLett.119.067402 ↗
18. Photostrictive Two-dimensional materials in the monochalcogenide family10.1103/PhysRevLett.118.227401 ↗
19. Single-layer single-crystalline SnSe nanosheets10.1021/ja3108017 ↗
20. The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures10.1039/C5NR06871A ↗
21. Novel two-dimensional ferroelectric PbTe under tension: a first-principles prediction
22. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS10.1063/1.4934750 ↗
23. Pressure-induced anomalous phase transitions and colossal enhancement of piezoelectricity in PbTiO310.1103/PhysRevLett.95.037601 ↗
24. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
25. Theory of polarization of crystalline solids10.1103/PhysRevB.47.1651 ↗
26. First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures10.1103/PhysRevB.78.134106 ↗