Photoluminescence manipulation in two-dimensional transition metal dichalcogenides
Source abstract
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as an intriguing platform for exploring novel physical phenomena and optoelectronic devices due to their excitonic emission characteristics derived from the atomic thin thickness and reduced dielectric screening effect. Notably, monolayer TMDCs with a direct bandgap exhibiting strong photoluminescence (PL) are promising candidates for the light-emitting devices, while the interlayer excitons in heterostructures hold great potential for the photonic chips and optical communication applications. However, the non-ideal photoluminescent intensity and quality due to the ultrathin thickness and high defect density of experimentally obtained monolayer TMDCs limit the further development for the light-emission applications. Here, we summarize the research progress on the PL manipulation of the excitonic emission in TMDCs, where the PL intensity enhancement and emission wavelength regulation are included. The concept and characteristics of excitons are overviewed firstly, followed by the discussion on the evaluation and characterization of excitonic emission. The state-of-the-art progress on the manipulation of the neutral excitons and interlayer excitons PL are then summarized. Finally, the challenges and prospects are proposed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced biosensing and bioanalysis techniques · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. Atomically thin MoS₂: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
3. Electroluminescence in single layer MoS210.1021/nl400516a ↗
4. Ultrasensitive photodetectors based on monolayer MoS210.1038/nnano.2013.100 ↗
5. Single defect light-emitting diode in a van der Waals heterostructure10.1021/acs.nanolett.6b01580 ↗
6. Monolayer excitonic laser10.1038/nphoton.2015.197 ↗
7. Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed10.1021/acs.nanolett.5b02559 ↗
8. Two-dimensional semiconductors: from materials preparation to electronic applications10.1002/aelm.201700045 ↗
9. High sensitivity hybrid PbS CQD-TMDC photodetectors up to 2 μm10.1021/acsphotonics.9b00870 ↗
10. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe210.1038/s41586-018-0626-9 ↗
11. Magnetically driven phonon instability enables the metal–insulator transition in h-FeS10.1038/s41567-020-0857-1 ↗
12. Ultrasensitive molecular sensing of few-layer niobium diselenide
13. Controllable growth of few-layer niobium disulfide by atmospheric pressure chemical vapor deposition for molecular sensing10.3389/fmats.2019.00279 ↗
14. Large-area Si-doped graphene: controllable synthesis and enhanced molecular sensing10.1002/adma.201403537 ↗
15. Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing10.1038/srep00586 ↗
16. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS210.1103/PhysRevLett.113.076802 ↗
17. Van der Waals stacked 2D layered materials for optoelectronics10.1088/2053-1583/3/2/022001 ↗
18. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions10.1038/natrevmats.2017.70 ↗
19. Ultrafast dynamics in van der Waals heterostructures10.1038/s41565-018-0298-5 ↗
20. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M=Mo,W; X= S, Se, Te)10.1103/PhysRevB.85.033305 ↗
21. Large-area and bright pulsed electroluminescence in monolayer semiconductors10.1038/s41467-018-03218-8 ↗
22. Near-unity photoluminescence quantum yield in MoS210.1126/science.aad2114 ↗
23. Ultrafast dynamics of defect-assisted electron–hole recombination in monolayer MoS210.1021/nl503636c ↗
24. Transient absorption microscopy of monolayer and bulk WSe210.1021/nn500277y ↗
25. Exciton-exciton annihilation in MoSe2 monolayers10.1103/PhysRevB.89.125427 ↗
26. Strain engineering in two-dimensional nanomaterials beyond graphene10.1016/j.nantod.2018.07.001 ↗
27. Growth of alloy MoS2xSe2(1–x) nanosheets with fully tunable chemical compositions and optical properties10.1021/ja500069b ↗
28. Synthesis of WS2xSe2–2x alloy nanosheets with composition-tunable electronic properties10.1021/acs.nanolett.5b03662 ↗
29. Electrical tuning of exciton–plasmon polariton coupling in monolayer MoS2 integrated with plasmonic nanoantenna lattice10.1021/acs.nanolett.7b02245 ↗
30. Control of strong light–matter interaction in monolayer WS2 through electric field gating10.1021/acs.nanolett.8b02932 ↗
31. Ultrafast laser spectroscopy of two-dimensional materials beyond graphene10.1002/adfm.201604509 ↗
32. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor10.1038/nmat4061 ↗
33. Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer WSe210.1021/acs.nanolett.5b01968 ↗
34. On valence-band splitting in layered MoS210.1021/acsnano.5b03505 ↗
35. In-plane propagation of light in transition metal dichalcogenide monolayers: optical selection rules10.1103/PhysRevLett.119.047401 ↗
36. Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors10.1126/science.aba1029 ↗
37. Electron transport across plasmonic molecular nanogaps interrogated with surface-enhanced Raman scattering10.1021/acsnano.7b08224 ↗
38. Large spin splitting in the conduction band of transition metal dichalcogenide monolayers10.1103/PhysRevB.88.245436 ↗
39. Splitting between bright and dark excitons in transition metal dichalcogenide monolayers10.1103/PhysRevB.93.121107 ↗
40. Experimental evidence for dark excitons in monolayer WSe210.1103/PhysRevLett.115.257403 ↗
41. WSe2 2D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications
42. Defect structure of localized excitons in a WSe2 monolayer10.1103/PhysRevLett.119.046101 ↗
43. Tightly bound trions in monolayer MoS210.1038/nmat3505 ↗
44. Electrical control of neutral and charged excitons in a monolayer semiconductor10.1038/ncomms2498 ↗
45. Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide10.1038/ncomms12715 ↗
46. Observation of biexcitons in monolayer WSe210.1038/nphys3324 ↗
47. Excited state biexcitons in atomically thin MoSe210.1021/acsnano.7b03909 ↗
48. Probing of free and localized excitons and trions in atomically thin WSe2, WS2, MoSe2 and MoS2 in photoluminescence and reflectivity experiments10.1088/1361-6528/aa87d0 ↗
49. Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides10.1038/ncomms9315 ↗
50. Excitonic linewidth approaching the homogeneous limit in MoS2-based van der Waals heterostructures
51. Optical coherence in atomic-monolayer transition-metal dichalcogenides limited by electron-phonon interactions10.1103/PhysRevLett.116.127402 ↗
52. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors10.1126/science.aaw8053 ↗
53. Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals10.1021/nn303973r ↗
54. Exciton dynamics and annihilation in WS2 2D semiconductors10.1039/C5NR00383K ↗
55. Exciton dynamics, transport, and annihilation in atomically thin two-dimensional semiconductors10.1021/acs.jpclett.7b00885 ↗
56. Single quantum emitters in monolayer semiconductors10.1038/nnano.2015.75 ↗
57. Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor10.1038/s41467-018-05558-x ↗
58. Dopant-induced giant photoluminescence of monolayer MoS2 by chemical vapor transport
59. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors10.1126/science.aaw8053 ↗
60. Synthetic WSe2 monolayers with high photoluminescence quantum yield10.1126/sciadv.aau4728 ↗
61. Exciton dynamics, transport, and annihilation in atomically thin two-dimensional semiconductors10.1021/acs.jpclett.7b00885 ↗
62. Optical identification of sulfur vacancies: bound excitons at the edges of monolayer tungsten disulfide10.1126/sciadv.1602813 ↗
63. High performance field-effect transistor based on multilayer tungsten disulfide10.1021/nn505253p ↗
64. Low-defect-density WS2 by hydroxide vapor phase deposition10.1038/s41467-022-31886-0 ↗
65. Controlling photoluminescence enhancement and energy transfer in WS-2:hBN:WS2 vertical stacks by precise interlayer distances10.1002/smll.201905985 ↗
66. Engineering substrate interactions for high luminescence efficiency of transition-metal dichalcogenide monolayers10.1002/adfm.201600418 ↗
67. Engineering light outcoupling in 2D materials10.1021/nl504632u ↗
68. Photoluminescence lightning: extraordinary oxygen modulated dynamics in WS2 monolayers10.1021/acs.nanolett.2c00462 ↗
69. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding10.1021/nn500532f ↗
70. Substitutional oxygen activated photoluminescence enhancement in monolayer transition metal dichalcogenides10.1007/s40843-021-1832-2 ↗
71. Robust and high photoluminescence in WS2 monolayer through in situ defect engineering10.1002/adfm.202105339 ↗
72. WO3-WS2 vertical bilayer heterostructures with high photoluminescence quantum yield10.1021/jacs.9b03453 ↗
73. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating10.1021/nl4011172 ↗
74. Direct vapor growth of 2D vertical heterostructures with tunable band alignments and interfacial charge transfer behaviors10.1002/advs.201802204 ↗
75. Local strain engineering in atomically thin MoS210.1021/nl402875m ↗
76. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits10.1038/s41566-020-0647-4 ↗
77. Enhancing multifunctionalities of transition-metal dichalcogenide monolayers via cation intercalation10.1021/acsnano.7b04880 ↗
78. Large-area and strain-reduced two-dimensional molybdenum disulfide monolayer emitters on a three-dimensional substrate10.1021/acsami.9b05082 ↗
79. Boost lasing performances of 2D semiconductor in a hybrid tungsten diselenide monolayer/cadmium selenide quantum dots microcavity laser10.1002/adom.202200799 ↗
80. Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply10.1038/s41467-022-28628-7 ↗
81. Observation of rapid exciton–exciton annihilation in monolayer molybdenum disulfide10.1021/nl5021975 ↗
82. Inhibited nonradiative decay at all exciton densities in monolayer semiconductors10.1126/science.abi9193 ↗
83. Twist-angle-controlled neutral exciton annihilation in WS2 homostructures10.1039/D2NR00195K ↗
84. Engineering exciton recombination pathways in bilayer WSe2 for bright luminescence10.1021/acsnano.1c09255 ↗
85. Controlled growth of large-area uniform multilayer hexagonal boron nitride as an effective 2D substrate10.1021/acsnano.8b03055 ↗
86. Photoluminescence quenching in gold - MoS2 hybrid nanoflakes10.1038/srep05575 ↗
87. Manipulation of photoluminescence of two-dimensional MoSe2 by gold nanoantennas
88. Highly enhanced photoluminescence of monolayer MoS2 in plasmonic hybrids with double-layer stacked Ag nanoparticles10.1021/acsami.1c21960 ↗
89. Plasmonic pumping of excitonic photoluminescence in hybrid MoS2–Au nanostructures10.1021/nn5056942 ↗
90. Near-infrared photodetector based on few-layer MoS2 with sensitivity enhanced by localized surface plasmon resonance10.1016/j.apsusc.2019.04.044 ↗
91. Plasmonically engineered light-matter interactions in Au-nanoparticle/MoS2 heterostructures for artificial optoelectronic synapse10.1007/s12274-021-3875-0 ↗
92. Large single-molecule fluorescence enhancements produced by a bowtie nanoantenna10.1038/nphoton.2009.187 ↗
93. Boosting the photoluminescence of monolayer MoS2 on high-density nanodimer arrays with sub-10 nm gap10.1002/adom.201700984 ↗
94. Strain-plasmonic coupled broadband photodetector based on monolayer MoS210.1002/smll.202107104 ↗
95. A flip-over plasmonic structure for photoluminescence enhancement of encapsulated WS2 monolayers10.1002/adom.202100397 ↗
96. Gap-mode surface-plasmon-enhanced photoluminescence and photoresponse of MoS210.1002/adma.201706527 ↗
97. Leveraging nanocavity harmonics for control of optical processes in 2D semiconductors10.1021/acs.nanolett.5b01062 ↗
98. Optical microcavities10.1038/nature01939 ↗
99. Emerging material platforms for integrated microcavity photonics10.1007/s11433-022-1957-3 ↗
100. Efficiently enhanced the visible-light absorption of monolayer WS2 by constructing an asymmetric Fabry-Perot cavity