Large Errors from Assuming Equivalent DC and High-Frequency Electrical Characteristics in Metal–Multiple-Insulator–Metal Diodes
Source abstract
Abstract
Metal–insulator–metal (MIM) tunnel diodes are essential for ultra-high-speed rectification. We review an erroneous method for distributing DC voltage drops across multiple insulator layers that is used in all the published literature on these devices. It has resulted in large errors between designed and fabricated multi-insulator diodes. For multi-insulator MIM diodes, voltage division is dependent on both tunneling resistances and oxide capacitances. We demonstrate that correct voltage division at DC is determined by the rectification resistance, as opposed to the commonly used capacitive voltage division. We find that DC characteristics of multi-insulator diodes cannot be used to predict high-frequency behavior.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical, Computer and Energy Engineering, University of Colorado at Boulder, Boulder, Colorado 80309-0425, United States
Funding
Advanced Research Projects Agency - Energy
References (29)
Show source-provided references
1. Moddel G. · 2013 · 410.1007/978-1-4614-3716-1 ↗
2. 10.1364/OE.21.00A41210.1364/OE.21.00A412 ↗
3. 10.1109/JQE.2010.208197110.1109/JQE.2010.2081971 ↗
4. Dees J. · Microwave J. · 1966 · 9 · 48
5. 10.1016/S1350-4495(98)00004-810.1016/S1350-4495(98)00004-8 ↗
6. 10.3390/app703024610.3390/app7030246 ↗
7. 10.1016/0921-4526(96)00359-610.1016/0921-4526(96)00359-6 ↗
8. 10.1038/srep2815510.1038/srep28155 ↗
9. 10.1016/j.mee.2009.03.00110.1016/j.mee.2009.03.001 ↗
10. 10.1109/5.28222810.1109/5.282228 ↗
11. 10.1364/AO.51.00678910.1364/AO.51.006789 ↗
12. 10.1016/j.mee.2015.04.11010.1016/j.mee.2015.04.110 ↗
13. 10.1016/j.mtener.2017.11.00210.1016/j.mtener.2017.11.002 ↗
14. 10.1063/1.499925810.1063/1.4999258 ↗
15. Weerakkody, A.; Belkadi, A.; Moddel, G. Towards a practical Al2O3-based metalinsulator-metal infrared rectenna. To be Submitted.
16. Grover S. · 2013 · 8910.1007/978-1-4614-3716-1_5 ↗
17. 10.1016/j.sse.2011.09.00410.1016/j.sse.2011.09.004 ↗
18. 10.1109/JQE.2012.222816610.1109/JQE.2012.2228166 ↗
19. 10.1007/s10825-006-0083-910.1007/s10825-006-0083-9 ↗
20. 10.1063/1.498427810.1063/1.4984278 ↗
21. Herner S. B. · J. Photovoltaics · 2017
22. 10.1088/1361-6404/aab5cf10.1088/1361-6404/aab5cf ↗
23. 10.1063/1.170268210.1063/1.1702682 ↗
24. Pelz, B.; Moddel, G. Distributed capacitance compensation in a metal-insulatormetal infrared rectenna using a traveling wave diode at 10.6 μm. To be submitted.
25. 10.1364/AO.44.00681310.1364/AO.44.006813 ↗
26. 10.1016/j.measurement.2018.01.05410.1016/j.measurement.2018.01.054 ↗
27. Eliasson, B. J. Metal-insulator-metal diodes for solar energy conversion. Ph.D. thesis, University of Colorado, 2001.
28. Joshi, S. Performance limits of optical rectennas. Ph.D. thesis, University of Colorado at Boulder, 2015.
29. 10.1103/PhysRevB.25.717410.1103/PhysRevB.25.7174 ↗