DataVXACS NanoPaper
journal article·2026-03-03

Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent Systems

Haksoon Jung, Joonghoon Choi, Seunghun Baek, Bong Gyu Shin, Young Jae Song, Hanggyo Jung, JoHyeon Kim, Jongwook Jeon, Gyumin Kim, Heechun Park, Yeonjoo Lee, Jinkyoung Yoo, Jae-Hyun Lee, Hyungwoo Kim, Kibum Kang, Jaeyong Jeong, Sang Hyeon Kim, Joohan Bae, Chang Soo Kim, Won Kwang Yang, Sungjoo Lee, Jiwook Kwon, Byung-Sung Kim, Jae-Hoon Han, Hyung-Jun Kim, Hoon Hahn Yoon, Jimin Kwon, Young Joon Hong

ACS Nano· Volume 20· Issue 8
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Source abstract

Abstract

The emergence of ultralarge-scale hardware systems for artificial intelligence is driving demand for high-performance heterogeneous integration. At the heart of these systems lies the maximization of computational capability through high data bandwidth, necessitating interconnects that either increase the number of links between tiers and chips or enhance the data transfer rate of each link. Monolithic three-dimensional (M3D) integration, particularly with two-dimensional (2D) materials, offers ultradense intertier vias and multifunctional devices within back-end-of-line-compatible processes, enabling compact vertical stacking of logic and memory. A critical challenge in this architecture is thermal management, requiring cross-layer electro-thermal analysis and codesign with integrated power regulation. In parallel, photonic integrated circuits provide low-latency, energy-efficient interchip communication by overcoming the traditional bandwidth limitation imposed by electrical signal loss, and their advantages become increasingly significant as the communication distance increases. Emerging concepts, including spectrally tunable 2D photodetectors and vertically stacked microlight-emitting-diode-photodiode transceivers, further enhance scalability by eliminating reliance on external lasers. This Review article highlights the convergence of M3D integration, 2D materials, and photonic interconnects, while outlining challenges of material compatibility, process scalability, and system-level codesign that must be addressed to realize a unified framework for next-generation computing and communication systems beyond conventional Si scaling.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 3D IC and TSV technologies · Ferroelectric and Negative Capacitance Devices · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Eonyang-eup, Ulju-gun, Ulsan 44919, Republic of Korea

Department of Nano Science and Technology, Department of Nano Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Seobu-ro 2066, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

Graduate School of Semiconductor Materials and Devices Engineering, UNIST, UNIST-gil 50, Eonyang-eup, Ulju-gun, Ulsan 44919, Republic of Korea

Department of Electrical and Computer Engineering, SKKU, Seobu-ro 2066, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

Center for Integrated Nanotechnologies, Materials Physics and Applications Division

Los Alamos National Laboratory

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daehak-ro 291, Yuseong-gu, Daejeon 34141, Republic of Korea

Blue Tile Lab

TDS Innovation

School of Electrical Engineering, KAIST, Daehak-ro 291, Yuseong-gu, Daejeon 34141, Republic of Korea

Graduate School of Semiconductor Technology, KAIST, Daehak-ro 291, Yuseong-gu, Daejeon 34141, Republic of Korea

Department of Display Engineering, SKKU, Seobu-ro 2066, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

Semiconductor R&D Center, Samsung Electronics Co., Ltd., Samsung-ro 1, Hwaseong, Gyeonggi-do 18448, Republic of Korea

Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea

Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, Republic of Korea

Funding

Samsung · Ulsan National Institute of Science and Technology · Basic Energy Sciences · National Research Foundation of Korea · Ministry of Trade, Industry and Energy

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