journal article·2025-10Open access

Luminescent AlN Semiconductor Nanocrystals

Hannah F. Gaiser, Felix Jung, Radian Popescu, Matthias Steurer, Dagmar Gerthsen, Claus Feldmann

ChemNanoMat· Volume 11· Issue 10

Abstract

Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf2] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Inorganic Chemistry Karlsruhe Institute of Technology (KIT) Engesserstrasse 15 D‐76131 Karlsruhe Germany

Laboratory for Electron Microscopy Karlsruhe Institute of Technology (KIT) Engesserstrasse 7 D‐76131 Karlsruhe Germany

Funding

Deutsche Forschungsgemeinschaft

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