Luminescent AlN Semiconductor Nanocrystals
Source abstract
Abstract
Aluminum nitride III‐V semiconductor nanoparticles are prepared in the liquid phase via a two‐step synthesis. In a first step, a mixed amide‐imide intermediate is prepared in liquid ammonia. In a second step, the ammonolysis is completed by microwave heating at 300 °C in [BMIm][NTf2] as an ionic liquid to obtain crystalline β‐AlN, which is usually known as a high‐pressure phase. The nanoparticles have a size of 3.7 ± 0.7 nm. Particle size and chemical composition are examined by transmission electron microscopy, energy‐dispersive X‐ray spectroscopy, infrared spectroscopy, and X‐ray powder diffraction. According to UV–vis spectroscopy and a Tauc plot, a bandgap of 5.2 eV is determined. The AlN nanoparticles show photoluminescence with bluish white emission and a quantum yield of 15%, which is a typical value for core‐type semiconductor nanoparticles without a protecting shell. A liquid‐phase synthesis of crystalline AlN nanoparticles (<10 nm) showing visible emission at room temperature is reported for the first time.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Inorganic Chemistry Karlsruhe Institute of Technology (KIT) Engesserstrasse 15 D‐76131 Karlsruhe Germany
Laboratory for Electron Microscopy Karlsruhe Institute of Technology (KIT) Engesserstrasse 7 D‐76131 Karlsruhe Germany
Funding
Deutsche Forschungsgemeinschaft
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