Fabrication of pyrite FeS2 thin films by sulfurizing oxide precursor films deposited via successive ionic layer adsorption and reaction method

Abstract Iron pyrite (FeS 2 ) is a naturally abundant and nontoxic semiconductor that can potentially be used in photovoltaic devices. In this report, pure pyrite FeS 2 thin films with homogeneous morphology and ideal composition are fabricated by sulfurizing Fe 2 O 3 precursor thin films deposited via successive ionic layer adsorption and reaction method. The formation mechanism of FeS 2 is identified by X-ray photoelectron spectroscopy. The optical and electrical (including photoelectrochemical) measurements show that the prepared pyrite FeS 2 thin films have high absorption coefficient, suitable band gap, p-type conductivity and good photo-electrical conversion ability.