High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

Abstract High performance self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) utilizing high- k Al 2 O 3 thin film as gate dielectric are developed in this paper. Good quality Al 2 O 3 thin film was deposited by reactive DC magnetron sputtering technique using aluminum target in a mixed argon and oxygen ambient at room temperature. The resulting transistor exhibits a field effect mobility of 27 cm 2 /V s, a threshold voltage of − 0.5 V, a subthreshold swing of 0.12 V/decade and an on/off current ratio of 9 × 10 6 . The proposed top-gate ZnO TFTs in this paper can act as driving devices in the next generation flat panel displays.