Thin film of guest-free type-II silicon clathrate on Si(111) wafer

Tetsuji Kume; Fumitaka Ohashi; K. Sakai; Atsuhiko Fukuyama; Motoharu Imai; Haruhiko Udono; Takayuki Ban; Hitoe Habuchi; Hidetoshi Suzuki; Tetsuo Ikari; Shigeo Sasaki; Shuichi Nonomura

doi:10.1016/j.tsf.2016.03.056

article·2016-04-30

Thin film of guest-free type-II silicon clathrate on Si(111) wafer

Tetsuji Kume, Fumitaka Ohashi, K. Sakai, Atsuhiko Fukuyama, Motoharu Imai, Haruhiko Udono, Takayuki Ban, Hitoe Habuchi, Hidetoshi Suzuki, Tetsuo Ikari, Shigeo Sasaki, Shuichi Nonomura

Thin Solid Films

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Source abstract

Abstract

Abstract Thin films of guest-free type-II Si clathrate (Si136) were fabricated on Si(111) wafers in two steps: NaxSi136 thin-film formation by thermal decomposition of NaSi precursor films and Na removal from the NaxSi136 film by a heat treatment with iodine. Cross-sectional TEM observation and XRD and Raman measurements verified the formation of 1-μm-thick Si136 films on the Si wafer. Since the prepared films showed n-type conduction, pn junction devices were developed by a Si136/p-type Si structure. This device showed a photovoltaic (PV) response under white light illumination. The thin film formation and the PV response of Si136 indicated this Si allotrope to be the next-generation platform for semiconductor technology.

Source: openaire · Quality: candidate unverified · Source record ↗

Research context

Electronic materials Materials processing

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces · Nanowire Synthesis and Applications

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