A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors

We present experimental results using an alternative cross-linker for poly(4-vinylphenol) (PVP) that allows lowering of the thermal budget of the cross-linking reaction to 130 °C which compares very favorable to the 180 °C required by the commonly used cross-linking agent poly(melamine-co-formaldehyde). Furthermore, we characterize the dielectric properties of a 200 nm thick layer and realize high quality organic thin film transistors using this low-temperature PVP as a gate-dielectric.