Nanostructured p-type cobalt layered double hydroxide/n-type polymer bulk heterojunction yields an inexpensive photovoltaic cell

Abstract A low-cost, environmentally benign method was used to prepare nanostructured thin films of Co 5 (OH) 8 (NO 3 ) 2 ·2H 2 O, a layered double hydroxide p-type semiconductor. When infilled with poly(3-butylthiophene) (P3BT), an n-type semiconducting polymer, the resulting hybrid bulk heterojunction yields a photovoltaic device. The indium-doped tin oxide/Co 5 (OH) 8 (NO 3 ) 2 ·2H 2 O/P3BT/Al cell described here is an unprecedented example of an optoelectronic device fabricated by a low-cost biologically inspired pathway independent of organic structure-directing agents. Under illumination, this proof-of-principle device yields an open circuit voltage of 1.38 V, a short circuit current of 9 μA/cm 2 , a fill factor of 26% and a power efficiency of 3.2·10 − 3 %. While the open circuit voltage of this prototype cell is close to its theoretical maximum, potential sources of the observed low efficiency are identified, and a suggested path for improvement is discussed.