Source abstract
Abstract
The growing demand for high-performance optoelectronic devices has spotlighted the scarcity of two-dimensional (2D) materials with robust in-plane anisotropy and stability, as traditional materials with one-dimensional (1D) distorted chains in parallel or antiparallel arrangements often fall short in these aspects. This work reports 2D AuPS, a semiconductor with an orthorhombic Pbca structure, featuring a four-layer stacked architecture and a mixed-coordination network integrating Au 3+ square planar coordination with P 1– /S 2– trigonal noncoplanar coordination. This design induces stereoscopic distortion, creating a nonuniform electronic density gradient that enhances in-plane anisotropy. 2D AuPS leverages its indirect bandgap to facilitate efficient charge carrier separation, with its puckered structure imparting strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating anisotropic ratios of 5, 12, and 16 for absorptive dichroism, conductivity, and photocurrent, respectively. The AuPS-based photodetector exhibits high performance underpinned by its ambient stability, positioning it as a candidate material for polarization-sensitive nanoelectronic and optoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Affiliations
School of Science, Hubei University of Technology, No. 28, Nanli Road, Hong-Shan District, Wuhan 430068, P. R. China
School of Physics, Sun Yat-Sen University, No. 135, Xingang West Road, Guangzhou 510275, P. R. China
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Funding
Hubei University of Science and Technology · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China · Key R&D Project of Hubei Provincial Technology Innovation Program