Optical and electrical properties of 2wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators

Abstract Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO–2 wt.% Al 2 O 3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet–visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiO x N y /SiN x /SiO x as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 10 4 and a field-effect mobility of 0.17 cm 2 /V·s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric.