Mobility- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors

Abstract A device model for amorphous In–Ga–Zn–O thin-film transistors ( a -IGZO TFTs) that explains temperature dependence is proposed. It incorporates a carrier-density dependent mobility and a density of subgap traps of a -IGZO. The model parameters were extracted from only one transfer curve of an a -IGZO TFT at a low drain voltage through a simple analytical model. Device simulation based on this model reproduced current- and mobility-gate voltage characteristics of the a -IGZO TFT well over a wide range of bias voltage and temperature (253–393 K).