Preparation of Pb(Zr,Ti)O3 thin films by RF-magnetron sputtering with single stoichiometric target: structural and electrical properties

Abstract Polycrystalline and ferroelectric Pb(Zr,Ti)O 3 films were prepared by RF-magnetron sputtering. No excess lead was used either during sputtering or during post-deposition annealing. The structural, microstructural, and electrical properties were examined as function of annealing treatments and bottom platinum electrode thickness. Surface morphology and compositional analysis were done with scanning electron microscopy and energy dispersive X-ray spectroscopy, respectively. The lattice constant of the film crystallized in the perovskite phase was 4.09 A. Relative dielectric constants of Pb(Zr,Ti)O 3 films grown on 0.3 and 1 μm thick platinum were 990 and 942, respectively, and much difference has not been observed in the loss tangent value. Remanent polarization and coercive field of the Pb(Zr,Ti)O 3 films grown on 0.3 μm thick platinum coated glass were 22 μC/cm 2 and 59 kV/cm, respectively, where as that on 1 μm thick platinum were 26 μC/cm 2 and 51 kV/cm.