Transparent conductive oxide thin films of tungsten-doped indium oxide

Abstract Transparent conductive oxide thin film of tungsten-doped In 2 O 3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 × 10 − 4 Ω·cm was reproducibly obtained, with carrier mobility greater than 57 cm 2 V − 1 s − 1 and carrier concentration of 4.0 × 10 20 cm − 3 , as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222).