Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

Abstract Coplanar type transparent thin film transistors (TFTs) have been fabricated on the glass substrates. The devices consist of intrinsic ZnO, Ga doped ZnO (GZO), and amorphous HfO 2 for the semiconductor active channel layer, electrode, and gate insulator, respectively. GZO and HfO 2 layers were prepared by using a pulsed laser deposition (PLD) and intrinsic ZnO layers were fabricated by using an rf-magnetron sputtering. The transparent TFT exhibits n-channel, enhancement mode behavior. The field effect mobility, threshold voltage, and a drain current on-to-off ratio were measured to be 14.7 cm 2 /Vs, 2 V, and 10 5 , respectively. High optical transmittance (> 85%) in visible region makes ZnO TFTs attractive for transparent electronics.