The wet-topotaxial process of junction formation and surface treatments of Cu2S–CdS thin-film solar cells
Source abstract
Abstract
Abstract The particular properties of Cu2S–CdS heterojunctions are revealed. The effects of lattice mismatch on epitaxy as well as wet- and dry-topotaxy are discussed and preconditions for successful application of topotaxy are elaborated. The influence of surface treatments of the cells and of additional semiconducting or metallic layers of monolayer-range thicknesses at the surface is demonstrated. The junction formation technology and the surface treatments appear to be relevant also to other photovoltaic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Anderson · Solid State Electron. · 1962 · 5 · 34110.1016/0038-1101(62)90115-6 ↗
2. Cook · J. Appl. Phys. · 1970 · 41 · 305810.1063/1.1659365 ↗
3. L.R. Shiozawa, G.A. Sullivan, F. Augustine, Conference Record on the Seventh IEEE Photov. Spec. Conference, Pasadena, IEEE, New York, 1968, p. 39
4. te Velde · Philips Res. Rep. · 1973 · 28 · 573
5. A. Rothwarf, J. Phillips, N. Convers Wyeth, Conf. Rec. 13th IEEE Photov. Spec. Conf., Washington, DC, IEEE, New York, 1978, p. 399
6. Fahrenbruch · J. Appl. Phys. · 1974 · 45 · 126410.1063/1.1663400 ↗
7. Olsen · J. Appl. Phys. · 1978 · 49 · 552310.1063/1.324472 ↗
8. Evans · Z. Kristallogr. · 1979 · 150 · 29910.1524/zkri.1979.150.1-4.299 ↗
9. Mukherjee · J. Appl. Phys. · 1977 · 48 · 153810.1063/1.323874 ↗
10. K. Bogus, S. Mattes, Conf. Rec. Ninth IEEE Photov. Spec. Conf., Silver Spring, IEEE, New York, 1972, p. 106
11. F. Pfisterer, H.W. Schock, W.H. Bloss, Conf. Rec. 12th IEEE Photov. Spec. Conf., Baton Rouge, IEEE, New York, 1976, p. 502