Preparation of transparent CuCrO2:Mg/ZnO p–n junctions by pulsed laser deposition

Abstract Transparent p – n heterojunctions composed of zinc oxide, copper–chromium oxide, and indium tin oxide (ITO) films were fabricated by pulsed laser deposition (PLD) on glass substrates at temperatures as low as 500 °C. The rectifying characteristics were observed in the current–voltage curves of the prepared junctions. Undoped and Mg-doped CuCrO 2 films were examined for their suitability as the p -type semiconductor layer for these junctions. A p – n junction with an n + -ZnO/ n -ZnO/ p -CuCrO 2 :Mg/ITO/glass structure exhibited the highest conductivity among all the samples. This 0.4-μm-thick junction exhibited an optical transparency of greater than 80% in the visible range.