Formation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursors

Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. Highlights ► Sulfurization of Cu–Bi thin films with elemental sulfur vapor. ► Effect of heating rate and temperature on structure and morphology. ► High heating rates are detrimental at temperatures higher than ~ 300 °C. ► Contrary to literature on H2S sulfurization, no Bi depletion was observed. ► Band-gap energy suitable for photovoltaic use, but efficiency needs improvement.