article·2003-01-01

Ferroelectric and dielectric properties of sol–gel derived BaxSr1−xTiO3 thin films

S.U. Adikary, H.L.W. Chan

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Abstract

Ferroelectric thin films of Ba 0.7 Sr 0.3 TiO 3 , Ba 0.8 Sr 0.2 TiO 3 , Ba 0.9 Sr 0.1 TiO 3 and BaTiO 3 were fabricated by a modified sol-gel technique on Pt/Ti/SiO 2 /Si substrates. All the compositions crystallized in perovskite structure and consist of well-defined grains. As the value of x increases grain size of the Ba x Sr 1-x TiO 3 thin films increases while the dielectric permittivity decreases. Ba 0.7 Sr 0.3 TiO 3 composition possesses the highest dielectric permittivity of 748 (at 100 kHz). Hysteresis loops measured at room temperature for all compositions showed that BaTiO 3 has the largest remnant polarization of 4.8 μC/cm 2 . The dielectric and ferroelectric properties of the sol-gel derived BaxSr 1-x TiO 3 thin films are strongly dependent on the Sr content and the grain.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Acoustic Wave Resonator Technologies

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