Preparation and characterization of Sb2Se3 thin films prepared by electrodeposition for photovoltaic applications

Abstract Thin films of semiconductors are commonly used for the fabrication of cost-effective solar cells. Sb 2 Se 3 thin films are suitable for use as absorber films in the polycrystalline thin film forms solar cells. The aim of the present study is to analyze the different experimental conditions to prepare Sb 2 Se 3 film using electrodeposition process. The differences in the structural and compositional properties of the film before and after heat treatment in N 2 atmosphere are also investigated. The electrodeposited films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). Sb 2 Se 3 (JCPDS 15861), Sb (JCPDS 5562) and Se (JCPDS 27603) were found after the films are annealed at 300°C. The optical bandgap value of the film was estimated as 2.00 eV from the optical spectral analyses.