journal article·2025-06-17

Direct Identification of Valley Coherence and Its Manipulation in Monolayer Two-Dimensional Semiconductor

Haonan Wang, Keisuke Shinokita, Kenji Watanabe, Takashi Taniguchi, Satoru Konabe, Kazunari Matsuda

ACS Nano· Volume 19· Issue 23
Publisher page

Abstract

Monolayer two-dimensional semiconductors are endowed with valley degrees of freedom due to broken inversion symmetry and strong spin–orbit coupling. The excited states in the K and K′ valleys possess information on valley pseudospin, which is useful for quantum-state manipulation in the valley pseudospin Bloch sphere. However, since intervalley decoherence occurs during light emission, directly probing valley coherence in the time domain has remained challenging. Herein, we have demonstrated the direct measurement of intervalley coherence between K and K′ valley excitons using polarized interferometry in a monolayer WSe 2 device. The experimental results showed that the intervalley coherence time is in the range of 200–300 fs, depending on the excitation power and temperature. Moreover, an asymmetric modulation of the intervalley coherence time as well as the degree of linear polarization was observed under electron and hole carrier doping by applying an external bias voltage, demonstrating an extended valley coherence time reaching 400 fs under high electron doping. The underlying mechanism of the polarity and carrier doping dependence of valley decoherence between K and K′ valley excitons was elucidated. The results presented herein offer a viable approach for directly probing valley coherence in the time domain and elucidating the underlying mechanism of the decoherence process toward quantum-state manipulation of valley pseudospin.
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Research context

OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Advanced Energy

Kyoto University

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Department of Chemical Science and Technology, Hosei University, 3-7-2 Kajinocho, Koganei, Tokyo 184-8584, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Core Research for Evolutional Science and Technology · Japan Society for the Promotion of Science · Fusion Oriented REsearch for disruptive Science and Technology

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