Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH₃NH₃PbI₃ Electrolyte Layer Enabling Enhanced Multilevel Memory

Hybrid organic–inorganic perovskite, CH3NH3PbI3 (MAPbI3), has attracted great attention as promising building blocks for resistive switching memory. However, the reproductive switching uniformity and long-term environmental stability are always critical issues for practical application. Herein, by insertion of a nanoscale AgInSbTe (AIST) layer between the Ag electrode and MAPbI3 electrolyte layer (Ag/AIST/MAPbI3/FTO), the switching uniformity and environmental stability of the memory cell can be greatly improved. The suppression of excess Ag ions injection and the protection of MAPbI3 from air exposure with the help of the AIST layer are ascribed to be responsible for the above-mentioned characteristics, respectively. Moreover, controllable tristate switching in the reset process provided the capability of multilevel storage of the memory cells, and the related mechanism has been identified as the control of nanoscale conductive filaments rupture in sequence from the AIST to MAPbI3 layer. The present work would offer an effective way to develop high uniform and environmental stable MAPbI3-based high density memory systems.