Multifunctional Logic-in-Memory Circuits Based on Reconfigurable WSe₂ Transistors via Enhanced Ambipolarity

Ambipolar two-dimensional semiconductors exhibit electrostatically modulable carrier polarity, enabling reconfigurable electronic functionalities critical for the development of logic-in-memory computing architectures. However, the ambipolar conduction is generally weak and unbalanced, in particular, under ambient operating conditions. Here, we develop a universal nonvolatile and reconfigurable device architecture based on tungsten diselenide (WSe 2 ) and delicately enhance its ambipolar transport via scanning probe lithography, demonstrating on/off current ratios approaching 10 10 for both electron and hole conductions. By integrating floating-gate architecture and split-gate control, the WSe 2 device can be configured into memory, transistor, and diode modes and perform reconfigurable linear and nonlinear logic operations with only one device, such as NAND, AND, OR, NOR, XOR, and XNOR circuits. Eventually, we realize operational logic-in-memory circuits by integrating our WSe 2 devices on a printed circuit board, demonstrating reliable half adder and parity-checker circuit operations under ambient conditions.