Mechanical Writing of Polar Skyrmionic Topological States via Extrinsic Dzyaloshinskii–Moriya-like Flexoelectricity in Ferroelectric Thin Films
Source abstract
Abstract
Exploring complex topological structures in condensed matter has shown promising applications in nanotechnology. Although polar topologies such as chiral vortices and skyrmions have been observed in ferroelectric heterostructures, their existence in simple systems has posed challenges due to the absence of intrinsic noncollinear interaction (like Dzyaloshinskii–Moriya interaction in ferromagnetics). Here, we demonstrate that a nanoindentation mechanically switches local polarizations to stable polar topologies, including skyrmions, within a room-temperature PbTiO 3 thin film via the flexoelectric effect as a noncollinear (Dzyaloshinskii–Moriya-like) driving force using phase-field simulations. In addition, by moving the indenter, the continuous polarization switching leads to the “writing” of arbitrary polar patterns (such as donut-like skyrmionium). Furthermore, the written topologies can be “erased” by applying a voltage with the same conducted indenter. Therefore, this study shows the writing and erasing process of room-temperature polar topologies in a ferroelectric thin film, which significantly advances their potential applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nonlocal and gradient elasticity in micro/nano structures · Multiferroics and related materials · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical Engineering and Science, Kyoto University, Kyoto Daigaku-katsura, Nishikyo-ku, Kyoto 615-8540, Japan
Department of Mechanics, School of Civil Engineering, Central South University, Changsha 410083, China
Funding
Japan Society for the Promotion of Science · Fusion Oriented REsearch for disruptive Science and Technology · Support for Pioneering Research Initiated by the Next Generation
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