Deterministic Orientation Control of Ferroelectric HfO2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode
Source abstract
Abstract
The scale-free ferroelectricity with superior Si compatibility of HfO 2 has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal–oxide–semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO 2 remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO 2 thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO 2 through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO 2 layer. By stabilizing different polarization directions of HfO 2 through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO 2 .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics Education, Seoul National University, Seoul 08826, Korea
School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
Funding
National Research Foundation of Korea · Semiconductor Research Corporation · Institute for Basic Science
References (52)
Show source-provided references
1. 10.1063/1.363405210.1063/1.3634052 ↗
2. 10.1002/adma.20140453110.1002/adma.201404531 ↗
3. Böscke, T. S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. Ferroelectricity in Hafnium Oxide: CMOS Compatible Ferroelectric Field Effect Transistors. In 2011 International Electron Devices Meeting, 2011; pp 24.5.1–24.5.4.10.1109/IEDM.2011.6131606 ↗
4. 10.1088/1361-6633/ab8f8610.1088/1361-6633/ab8f86 ↗
5. 10.1002/adma.20220490410.1002/adma.202204904 ↗
6. 10.1038/s41586-020-2208-x10.1038/s41586-020-2208-x ↗
7. 10.1126/science.abm864210.1126/science.abm8642 ↗
8. 10.1038/s41586-022-04425-610.1038/s41586-022-04425-6 ↗
9. 10.1126/science.aba006710.1126/science.aba0067 ↗
10. 10.1021/acsami.9b1287810.1021/acsami.9b12878 ↗
11. 10.1038/s41578-022-00431-210.1038/s41578-022-00431-2 ↗
12. 10.1016/j.actamat.2020.07.01210.1016/j.actamat.2020.07.012 ↗
13. 10.1016/j.mattod.2021.07.02210.1016/j.mattod.2021.07.022 ↗
14. 10.1063/5.004797710.1063/5.0047977 ↗
15. 10.1063/1.492745010.1063/1.4927450 ↗
16. 10.1038/s41563-018-0196-010.1038/s41563-018-0196-0 ↗
17. 10.1021/acsaelm.1c0011010.1021/acsaelm.1c00110 ↗
18. 10.1002/pssr.20210002510.1002/pssr.202100025 ↗
19. 10.1002/adma.20210988910.1002/adma.202109889 ↗
20. 10.1038/s41563-022-01282-610.1038/s41563-022-01282-6 ↗
21. 10.1021/acsami.8b1168110.1021/acsami.8b11681 ↗
22. 10.1002/aelm.20200072810.1002/aelm.202000728 ↗
23. 10.1126/science.abk319510.1126/science.abk3195 ↗
24. 10.1038/s41598-021-85773-710.1038/s41598-021-85773-7 ↗
25. 10.1126/science.abf378910.1126/science.abf3789 ↗
26. 10.1103/RevModPhys.73.78310.1103/RevModPhys.73.783 ↗
27. 10.1126/science.aaa154310.1126/science.aaa1543 ↗
28. 10.1038/nchem.244110.1038/nchem.2441 ↗
29. 10.1002/adma.20180618310.1002/adma.201806183 ↗
30. 10.1038/s41563-020-00897-x10.1038/s41563-020-00897-x ↗
31. 10.1063/1.509788010.1063/1.5097880 ↗
32. 10.1021/acsaelm.1c0034210.1021/acsaelm.1c00342 ↗
33. 10.1021/acsaelm.8b0006510.1021/acsaelm.8b00065 ↗
34. 10.1021/nl302049k10.1021/nl302049k ↗
35. Müller, J.; Böscke, T. S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T. M.; Kalinin, S. V.; Schlösser, T.; Boschke, R.; van Bentum, R.; Schröder, U.; Mikolajick, T. Ferroelectric Hafnium Oxide: A CMOS-Compatible and Highly Scalable Approach to Future Ferroelectric Memories. In 2013 IEEE International Electron Devices Meeting, 2013; pp 10.8.1–10.8.4.10.1109/IEDM.2013.6724605 ↗
36. 10.1063/1.494502910.1063/1.4945029 ↗
37. 10.1063/1.502068810.1063/1.5020688 ↗
38. 10.1021/acsaelm.9b0025610.1021/acsaelm.9b00256 ↗
39. 10.1021/acs.cgd.0c0009510.1021/acs.cgd.0c00095 ↗
40. 10.1063/1.496243110.1063/1.4962431 ↗
41. 10.1021/acs.jpcc.9b0597410.1021/acs.jpcc.9b05974 ↗
42. 10.1063/1.491913510.1063/1.4919135 ↗
43. 10.1038/s41467-022-28236-510.1038/s41467-022-28236-5 ↗
44. 10.1021/acsami.5b1165310.1021/acsami.5b11653 ↗
45. 10.1063/5.003571410.1063/5.0035714 ↗
46. 10.1063/1.366720510.1063/1.3667205 ↗
47. 10.1063/1.474720910.1063/1.4747209 ↗
48. 10.1039/C6CP07501K10.1039/C6CP07501K ↗
49. 10.1063/1.505525810.1063/1.5055258 ↗
50. 10.1002/pssr.20217002210.1002/pssr.202170022 ↗
51. 10.1063/5.002969110.1063/5.0029691 ↗
52. 10.1063/5.010056210.1063/5.0100562 ↗