Graphene Magnetoresistance Control by Photoferroelectric Substrate
Source abstract
Abstract
Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09596, Germany
Funding
Agence Nationale de la Recherche · Universit? de Strasbourg · Institut Universitaire de France
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