Valley-Hybridized Gate-Tunable 1D Exciton Confinement in MoSe₂

Maximilian Heithoff; Álvaro Moreno; Iacopo Torre; Matthew S. G. Feuer; Carola M. Purser; Gian Marcello Andolina; Giuseppe Calajò; Kenji Watanabe; Takashi Taniguchi; Dhiren M. Kara; Patrick Hays; Seth Ariel Tongay; Vladimir I. Fal’ko; Darrick Chang; Mete Atatüre; Antoine Reserbat-Plantey; Frank H.L. Koppens

doi:10.1021/acsnano.4c04786

journal article·2024-11-05Open access

Valley-Hybridized Gate-Tunable 1D Exciton Confinement in MoSe₂

Maximilian Heithoff, Álvaro Moreno, Iacopo Torre, Matthew S. G. Feuer, Carola M. Purser, Gian Marcello Andolina, Giuseppe Calajò, Kenji Watanabe, Takashi Taniguchi, Dhiren M. Kara, Patrick Hays, Seth Ariel Tongay, Vladimir I. Fal’ko, Darrick Chang, Mete Atatüre, Antoine Reserbat-Plantey, Frank H.L. Koppens

ACS Nano· Volume 18· Issue 44

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Source abstract

Abstract

Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the quantum photonics and optoelectronics fields. Monolayers of transition metal dichalcogenides (TMDs) offer inherent 2D confinement and possess significant exciton binding energies, making them promising candidates for achieving electric-field-based confinement of excitons without dissociation. Exploiting the valley degree of freedom associated with these confined states further broadens the prospects for exciton engineering. Here, we show electric control of light polarization emitted from one-dimensional (1D) quantum-confined states in MoSe 2 . Building on previous reports of tunable trapping potentials and linearly polarized emission, we extend this understanding by demonstrating how nonuniform in-plane electric fields enable in situ control of these effects and highlight the role of gate-tunable valley hybridization in these localized states. Their polarization is entirely engineered through either the 1D confinement potential’s geometry or an out-of-plane magnetic field. Controlling nonuniform in-plane electric fields in TMDs enables control of the energy (up to five times its line width), polarization state (from circular to linear), and position of 1D confined excitonic states (5 nm V –1 ).

Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials Electronic materials

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

ICFO−Institut de Ciencies Fotoniques, Castelldefels ,08860 Barcelona, Spain

Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.

Cambridge Graphene Centre

University of Cambridge

Instituto Nazionale di Fisica Nucleare (INFN), Sezione di Padova

Research Center for Electronic and Optical Materials

National Institute for Materials Science

Research Center for Materials Nanoarchitectonics

Materials Science and Engineering Program, School for Engineering of Matter, Transport and Energy

Arizona State University

National Graphene Institute

Department of Physics and Astronomy

University of Manchester

Henry Royce Institute for Advanced Materials

ICREA

Université Côté d’Azur, CNRS, CRHEA, Valbonne, 06560 Sophia-Antipolis, France

Funding

Ag?ncia de Gesti? d'Ajuts Universitaris i de Recerca · Division of Electrical, Communications and Cyber Systems · Division of Civil, Mechanical and Manufacturing Innovation · Division of Materials Research · Fundaci?n Cellex · Agence Nationale de la Recherche · European Research Council · Ministerio de Ciencia, Innovaci?n y Universidades · Ministry of Education, Culture, Sports, Science and Technology · Basic Energy Sciences · Fundaci?n Mig-Puig · H2020 Marie Sklodowska-Curie Actions · H2020 Future and Emerging Technologies · Japan Society for the Promotion of Science · Centre National de la Recherche Scientifique · NextGenerationEU

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