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journal article·2024-10-22

Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/h-BN/WSe2 Junctions

Kei Kinoshita, Rai Moriya, Seiya Kawasaki, Shota Okazaki, Momoko Onodera, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida

ACS Nano· Volume 18· Issue 42
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Source abstract

Abstract

Resonant tunneling diodes (RTDs) are a core technology in III–V semiconductor devices. The realization of high-performance RTD using two-dimensional (2D) materials has been long awaited, but it has yet to be accomplished. To this end, we investigate a range of WSe 2 / h -BN/WSe 2 RTD devices by varying the number of layers of source and drain WSe 2 . The highest peak-to-valley ratio (PVR) is demonstrated in the three-layer (3L) WSe 2 / h -BN/1-layer (1L) WSe 2 structure. The observed PVR values of 63.6 at 2 K and 16.2 at 300 K are the highest among the 2D material-based RTDs reported to date. Our results indicate the two key conditions to achieve high PVR: (1) resonant tunneling should occur between the Γ-point bands of the source and drain electrodes, and (2) the Γ-point bands contributing to the resonant tunneling should be energetically separated from the other bands. Our results provide an important step to outperform III–V semiconductor RTDs with 2D material-based RTDs.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro ,Tokyo153-8505, Japan

Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Autonomous Systems Materialogy, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan

Funding

JST-Mirai Program · Ministry of Education, Culture, Sports, Science and Technology · Core Research for Evolutional Science and Technology · Precursory Research for Embryonic Science and Technology · Japan Society for the Promotion of Science · Support Center for Advanced Telecommunications Technology Research Foundation

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