journal article·2024-09-12

Topological van der Waals Contact for Two-Dimensional Semiconductors

Soheil Ghods, Hyunjin Lee, Jun-Hui Choi, Ji-Yun Moon, Sein Kim, Seung-Il Kim, Hyung Jun Kwun, Mukkath Joseph Josline, Chan Young Kim, Sang Hwa Hyun, Sang Won Kim, Seok-Kyun Son, Taehun Lee, Yoon Kyeung Lee, Keun Heo, Kostya. S. Novoselov, Jae-Hyun Lee

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Abstract

The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb 2 Te 3 topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe 2, achieving ultralow SBH (∼24 meV) and contact resistance (∼0.71 kΩ·μm). Simulations highlight the role of topological surface states in Sb 2 Te 3, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of Sb 2 Te 3 T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 μs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
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Research context

OpenAlex topics: Graphene research and applications · Topological Materials and Phenomena · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea

School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea

Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States

2D Device Laboratory, Samsung Advanced Institute of Technology, Suwon 16678, Korea

Device Research Center, Samsung Advanced Institute of Technology, Suwon 16678, Korea

Department of Physics and Department of Information Display, Kyung Hee University, Seoul 02447, Korea

Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore

School of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Korea

Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea

Funding

National Research Foundation of Korea

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