journal article·2024-08-20

Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition

Hyeonbin Park, Jae Hun Hwang, Seung Hoon Oh, Jin Joo Ryu, Kanghyeok Jeon, Minsoo Kang, Hyun-Jun Chai, Ayoung Ham, Gun Hwan Kim, Kibum Kang, Taeyong Eom

ACS Nano· Volume 18· Issue 33
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Abstract

This study describes a modified atomic layer deposition (ALD) process for fabricating BiO x Se y thin films, targeting their application as high-k dielectrics in semiconductor devices, especially for two-dimensional semiconductors. Using an intermediate-enhanced ALD technique for Bi 2 Se 3 and a plasma-enhanced ALD process for Bi 2 O 3, a method for the sequential deposition of Bi 2 SeO 5 ternary films has been established. The thin film has been deposited on SiO 2 and TiN substrates, exhibiting growth rates of 0.17 to 0.16 nm·cycle –1 without an incubation period, thanks to facile nucleation characteristics. The resulting film exhibited high flatness and reached 96% of its theoretical density, forming a uniform nanocrystalline structure. Electrical evaluations using metal–insulator–metal capacitors indicated the dielectric constant (∼17.6) and electrical breakdown strength (2.6 MV·cm –1 ), demonstrating their potential as a dielectric layer.
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Research context

OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Daejeon, Yuseong-gu 34114, Republic of Korea

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Republic of Korea

Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, Seodaemun-gu 03722, Republic of Korea

Department of System Semiconductor Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Republic of Korea

Department of Semiconductor System Engineering, Sejong University, 209 Neungdong-ro, Seoul, Gwangjin-gu 05006, Republic of Korea

Funding

Korea Research Institute of Chemical Technology · National Research Foundation of Korea

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