DataVXACS NanoPaper
journal article·2024-08-13Open access

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Yi Shuang, Shunsuke Mori, Takuya Yamamoto, Shogo Hatayama, Yuta Saito, Paul J. Fons, Yun-Heub Song, Jin-Pyo Hong, Daisuke Ando, Yuji Sutou

ACS Nano· Volume 18· Issue 32
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Source abstract

Abstract

High Resolution Image Download MS PowerPoint Slide Phase-change materials such as Ge–Sb–Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 10 5 ) and lower RESET energy (one order of magnitude reduction from GST). High-resolution transmission electron microscopy revealed a phase-change from the low-resistance cubic CrN phase into the highly resistive hexagonal CrN 2 phase induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a strategy for the next-generation of PCRAM, enabling a large ON/OFF ratio (∼10 5 ), low switching energy (∼100 pJ), and fast operation (∼30 ns).
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Research context

Electronic materials

OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai 980-8579, Japan

Department of Metallurgy, Graduate School of Engineering, Tohoku University, Miyagi 980-8579, Japan

Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Umezono 1-1-1, Tsukuba 305-8568, Japan

Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan

Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea

Department of Physics, Hanyang University, Seoul 04763, Korea

Funding

Hirose Foundation · Murata Science Foundation · Ministry of Education, Culture, Sports, Science and Technology · Ministry of Internal Affairs and Communications · Iketani Science and Technology Foundation

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