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journal article·2024-03-05Open access

Atomistic Probing of Defect-Engineered 2H-MoTe2 Monolayers

Odongo Francis Ngome Okello, Dong-Hwan Yang, Seung-Young Seo, Jewook Park, Gunho Moon, Dongwon Shin, Yu-Seong Chu, Sejung Yang, Teruyasu Mizoguchi, Moon-Ho Jo, Si-Young Choi

ACS Nano· Volume 18· Issue 9
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Source abstract

Abstract

High Resolution Image Download MS PowerPoint Slide Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe 2 monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe 2 samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe 2, respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe 2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.
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Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang-si 37673, Republic of Korea

Samsung Electronics, Foundry Analysis & Engineering Team, Global Manufacturing & Infra Technology, Samsungjeonja-ro 1, Hwaseong-si 18448, Republic of Korea

Center for Van der Waals Quantum Solids, Institute of Basic Science (IBS), 77 Cheongam-ro, Nam-gu, Pohang-si 37673, Republic of Korea

Materials Science and Technology Division, Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee 37831, United States

Division of Biomedical Engineering, College of Health Sciences, Yonsei University, 1, Yeonsedae-gil, Heungeop-myeon, Wonju-si 26493, Republic of Korea

Department of Precision Medicine, Yonsei University, Wonju College of Medicine, 20 Ilsan-ro, Wonju-si 26426, Republic of Korea

Department of Medical Informatics and Biostatistics, Graduate School, Yonsei University, 20 Ilsan-ro, Wonju-si 26426, Republic of Korea

Institute of Industrial Science, The University of Tokyo, Komaba, Meguro 4-6-1, Tokyo 153-8505, Japan

Department of Semiconductor Engineering, POSTECH, 77 Cheongam-ro, Nam-gu, Pohang-si 37673, Republic of Korea

Funding

Ministry of Science and ICT, South Korea · Korea Basic Science Institute · Institute for Basic Science

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