journal article·2025-01-28

Multispectral Integrated Black Arsenene Phototransistors for High-Resolution Imaging and Enhanced Secure Communication

Li Han, Shi Zhang, Shijian Tian, Libo Zhang, Yingdong Wei, Kaixuan Zhang, Mengjie Jiang, Yuan He, Changlong Liu, Weiwei Tang, Jiale He, Haibo Shu, Antonio Politano, Xiaoshuang Chen, Lin Wang

ACS Nano· Volume 19· Issue 3
Publisher page

Abstract

The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, and medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents and the necessity for cryogenic cooling, which limit their effectiveness in detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room temperature based on two-dimensional black arsenene (b-As) nanosheets. This device demonstrates responsivity across visible, near-infrared, and THz spectral ranges, with responsivities reaching 91.6 A/W at 520 nm, 6.3 A/W at 1550 nm, and 7.8 V/W at 0.27 THz. The exceptional THz responsivity is attributed to the use of plasma-wave rectification in antenna-integrated field-effect transistors with asymmetric antennas, enhancing light-matter interaction and facilitating nonlinear rectification within the two-dimensional electron gas of the transistor channel, achieving a voltage-dependent bipolar response. These advanced b-As-based photodetectors also enable secure THz communication through complex logic operations, achieving robust data encryption and high-performance signal processing.
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Research context

OpenAlex topics: 2D Materials and Applications · Plasmonic and Surface Plasmon Research · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China

College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China

Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China

Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila (AQ), Italy

University of Chinese Academy of Sciences, Beijing 100049, China

Funding

Natural Science Foundation of Shanghai Municipality · National Key Research and Development Program of China · China Postdoctoral Science Foundation · Major Scientific Project of Zhejiang Laboratory · Ministero dell'Universit? e della Ricerca · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Chinese Academy of Sciences

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