journal article·2020-05-26

Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Yung-Chang Lin, Hyun Goo Ji, Li-Jen Chang, Yao-Pang Chang, Zheng Liu, Gun-Do Lee, Po-Wen Chiu, Hiroki Ago, Kazu Suenaga

ACS Nano· Volume 14· Issue 5
Publisher page

Abstract

Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Non-Destructive Testing Techniques · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan

Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan

Information and Communications Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan

Institute of Communication Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan

Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Republic of Korea

Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan

Funding

Ministry of Science and Technology · Core Research for Evolutional Science and Technology · Japan Society for the Promotion of Science · National Research Foundation · Kazato Research Encouragement Prize

References (34)

Show source-provided references
1. 10.1126/sciadv.aau340710.1126/sciadv.aau3407 ↗
2. 10.1021/acs.chemmater.7b0414910.1021/acs.chemmater.7b04149 ↗
3. 10.1038/ncomms1042610.1038/ncomms10426 ↗
4. 10.1002/smll.20150081110.1002/smll.201500811 ↗
5. 10.1126/science.119689310.1126/science.1196893 ↗
6. 10.1038/nnano.2010.5310.1038/nnano.2010.53 ↗
7. 10.1038/ncomms1571410.1038/ncomms15714 ↗
8. 10.1021/nn403454e10.1021/nn403454e ↗
9. 10.1021/acs.jpcc.6b0207310.1021/acs.jpcc.6b02073 ↗
10. 10.1021/acs.nanolett.6b0088810.1021/acs.nanolett.6b00888 ↗
11. 10.1038/nature0971810.1038/nature09718 ↗
12. 10.1021/nn103342310.1021/nn1033423 ↗
13. Bassett G. A. · Proc. R. Soc. London. Ser. A. Math. Phys. Sci. · 1958 · 246 · 345
14. 10.1116/1.131568810.1116/1.1315688 ↗
15. 10.1038/179752a010.1038/179752a0 ↗
16. 10.1016/j.ultramic.2009.11.01510.1016/j.ultramic.2009.11.015 ↗
17. 10.1063/1.480308710.1063/1.4803087 ↗
18. 10.1093/jmicro/dfx00910.1093/jmicro/dfx009 ↗
19. 10.1017/S143192761300372310.1017/S1431927613003723 ↗
20. 10.1093/jmicro/dfu02410.1093/jmicro/dfu024 ↗
21. Williams D. B. · 2009 · 38910.1007/978-0-387-76501-3_23 ↗
22. Creath K. · 2006 · 756
23. 10.1021/acs.nanolett.8b0183910.1021/acs.nanolett.8b01839 ↗
24. 10.1103/PhysRevMaterials.3.06400310.1103/PhysRevMaterials.3.064003 ↗
25. 10.1038/nmat409110.1038/nmat4091 ↗
26. 10.1126/science.aab409710.1126/science.aab4097 ↗
27. 10.1126/science.aao536010.1126/science.aao5360 ↗
28. 10.1103/PhysRevB.81.19542010.1103/PhysRevB.81.195420 ↗
29. 10.1021/nl400747910.1021/nl4007479 ↗
30. 10.1021/nl203733r10.1021/nl203733r ↗
31. 10.1021/nn200105j10.1021/nn200105j ↗
32. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
33. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
34. 10.1103/PhysRevB.41.789210.1103/PhysRevB.41.7892 ↗