journal article·2022-01-25Open access

Solid-Ionic Memory in a van der Waals Heterostructure

Jieqiong Chen, Rui Guo, Xiaowei Wang, Chao Zhu, Guiming Cao, Lu You, Ruihuan Duan, Chao Zhu, Shreyash Sudhakar Hadke, Xun Cao, Teddy Salim, Pio John S. Buenconsejo, Manzhang Xu, Xiaoxu Zhao, Jiadong Zhou, Ya Deng, Qingsheng Zeng, Lydia H. Wong, Jingsheng Chen, Fucai Liu, Zheng Liu

ACS Nano· Volume 16· Issue 1

Abstract

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, P. R. China

CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore

Funding

Agency for Science, Technology and Research · Ministry of Science and Technology of the People's Republic of China · Ministry of Education - Singapore · National Research Foundation Singapore · National Natural Science Foundation of China · Applied Basic Research Program of Sichuan Province · Sichuan Province Key Laboratory of Display Science and Technology

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