journal article·2021-12-28Open access

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2 Nanocrystals

Samantha M. Harvey, Daniel W. Houck, Wen Liu, Yuzi Liu, David J. Gosztola, Brian A. Korgel, Michael R. Wasielewski, Richard D. Schaller

ACS Nano· Volume 15· Issue 12

Abstract

CuInSe2 nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe2 nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States

McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States

Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States

Funding

Division of Chemistry · Welch Foundation · Division of Industrial Innovation and Partnerships · Basic Energy Sciences · Division of Graduate Education · Division of Materials Research

References (96)

Show source-provided references
1. 10.1002/anie.20170851010.1002/anie.201708510 ↗
2. 10.1038/s41528-018-0023-310.1038/s41528-018-0023-3 ↗
3. 10.1515/nanoph-2012-003110.1515/nanoph-2012-0031 ↗
4. 10.1021/acs.chemrev.6b0016910.1021/acs.chemrev.6b00169 ↗
5. 10.1021/jp806791s10.1021/jp806791s ↗
6. 10.1021/jz200802j10.1021/jz200802j ↗
7. 10.3390/ma602044510.3390/ma6020445 ↗
8. Reiss P. · 2008 · 3510.1007/978-3-211-75237-1_2 ↗
9. 10.1039/C4RA02684E10.1039/C4RA02684E ↗
10. 10.1021/ar800053710.1021/ar8000537 ↗
11. 10.1080/00958972.2012.69501910.1080/00958972.2012.695019 ↗
12. 10.1021/acs.chemrev.6b0010210.1021/acs.chemrev.6b00102 ↗
13. 10.1016/j.mattod.2017.02.00610.1016/j.mattod.2017.02.006 ↗
14. 10.1021/jp404031s10.1021/jp404031s ↗
15. 10.1146/annurev-physchem-040513-10364910.1146/annurev-physchem-040513-103649 ↗
16. 10.1021/ja202941510.1021/ja2029415 ↗
17. 10.1021/acs.jpclett.7b0219310.1021/acs.jpclett.7b02193 ↗
18. 10.1021/acsnano.0c0555310.1021/acsnano.0c05553 ↗
19. 10.1021/nn500897c10.1021/nn500897c ↗
20. 10.1021/ja408675810.1021/ja4086758 ↗
21. 10.1021/acs.chemmater.6b0464810.1021/acs.chemmater.6b04648 ↗
22. 10.1021/acs.chemrev.6b0011610.1021/acs.chemrev.6b00116 ↗
23. 10.1021/acs.chemmater.7b0471010.1021/acs.chemmater.7b04710 ↗
24. 10.1039/D0QI01228A10.1039/D0QI01228A ↗
25. 10.1039/c3tc30273c10.1039/c3tc30273c ↗
26. 10.1103/PhysRevB.57.964210.1103/PhysRevB.57.9642 ↗
27. 10.1016/S0022-3697(99)00190-010.1016/S0022-3697(99)00190-0 ↗
28. 10.1016/S0022-3697(03)00148-310.1016/S0022-3697(03)00148-3 ↗
29. 10.1038/s41467-020-17434-810.1038/s41467-020-17434-8 ↗
30. 10.1021/acs.jpclett.8b0365310.1021/acs.jpclett.8b03653 ↗
31. 10.1021/acs.jpclett.5b0221110.1021/acs.jpclett.5b02211 ↗
32. 10.1038/s41560-020-0617-610.1038/s41560-020-0617-6 ↗
33. Madelung O. · 2004 · 28910.1007/978-3-642-18865-7_7 ↗
34. Madelung O. · 2004 · 710.1007/978-3-642-18865-7_2 ↗
35. 10.1039/C5GC00908A10.1039/C5GC00908A ↗
36. 10.1021/acsnano.8b0981510.1021/acsnano.8b09815 ↗
37. 10.1016/j.egypro.2015.07.76510.1016/j.egypro.2015.07.765 ↗
38. 10.1002/aenm.20190142810.1002/aenm.201901428 ↗
39. 10.1016/j.mattod.2020.09.00210.1016/j.mattod.2020.09.002 ↗
40. 10.1002/pip.281110.1002/pip.2811 ↗
41. 10.7567/JJAP.56.04CA0210.7567/JJAP.56.04CA02 ↗
42. 10.1021/acsenergylett.7b0000110.1021/acsenergylett.7b00001 ↗
43. 10.1039/c0ee00098a10.1039/c0ee00098a ↗
44. Stolle, C. J.; Harvey, T. B.; Korgel, B. A. Photonic Curing of Ligand-Capped CuInSe2 Nanocrystal Films. Proceedings of the 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC); Denver, June 8–13, 2004; IEEE: Piscataway, NJ, 2014; pp 0270–0274.10.1109/PVSC.2014.6924897 ↗
45. 10.1021/am300384610.1021/am3003846 ↗
46. 10.1039/c3ra41602j10.1039/c3ra41602j ↗
47. 10.1109/TNANO.2019.292795110.1109/TNANO.2019.2927951 ↗
48. 10.1021/acs.jpcc.0c0448910.1021/acs.jpcc.0c04489 ↗
49. 10.1016/j.synthmet.2016.04.00210.1016/j.synthmet.2016.04.002 ↗
50. 10.1021/acs.chemmater.8b0220510.1021/acs.chemmater.8b02205 ↗
51. 10.1021/jz501640f10.1021/jz501640f ↗
52. 10.1021/acs.chemmater.8b0401610.1021/acs.chemmater.8b04016 ↗
53. 10.1021/ja805845q10.1021/ja805845q ↗
54. 10.1364/OE.18.00A41110.1364/OE.18.00A411 ↗
55. 10.1038/s41598-019-47670-y10.1038/s41598-019-47670-y ↗
56. 10.1021/jp994413210.1021/jp9944132 ↗
57. 10.1103/PhysRevB.60.R217710.1103/PhysRevB.60.R2177 ↗
58. 10.1021/jp506537410.1021/jp5065374 ↗
59. 10.1063/1.486227410.1063/1.4862274 ↗
60. 10.1021/acs.jpclett.9b0159610.1021/acs.jpclett.9b01596 ↗
61. 10.1146/annurev.physchem.58.032806.10453710.1146/annurev.physchem.58.032806.104537 ↗
62. 10.1063/1.12084610.1063/1.120846 ↗
63. 10.1021/nn503127410.1021/nn5031274 ↗
64. 10.1021/acs.jpcc.9b0055810.1021/acs.jpcc.9b00558 ↗
65. 10.1016/j.tsf.2004.06.13410.1016/j.tsf.2004.06.134 ↗
66. 10.1063/1.35219510.1063/1.352195 ↗
67. 10.1038/s41467-021-21153-z10.1038/s41467-021-21153-z ↗
68. 10.1021/ja066205a10.1021/ja066205a ↗
69. 10.1134/S002016850812006610.1134/S0020168508120066 ↗
70. 10.1021/cm402306q10.1021/cm402306q ↗
71. 10.1021/jp204249j10.1021/jp204249j ↗
72. 10.1021/acsphotonics.7b0056010.1021/acsphotonics.7b00560 ↗
73. 10.1021/acsnano.8b0584310.1021/acsnano.8b05843 ↗
74. 10.1021/jacs.5b0854710.1021/jacs.5b08547 ↗
75. 10.1021/jz502154m10.1021/jz502154m ↗
76. 10.1021/acs.jpclett.7b0279310.1021/acs.jpclett.7b02793 ↗
77. 10.1021/jp405616u10.1021/jp405616u ↗
78. 10.1021/nn502996710.1021/nn5029967 ↗
79. 10.1021/nn405811p10.1021/nn405811p ↗
80. 10.1039/C7CP02033C10.1039/C7CP02033C ↗
81. 10.1186/s11671-015-0800-z10.1186/s11671-015-0800-z ↗
82. 10.1557/jmr.2014.1710.1557/jmr.2014.17 ↗
83. 10.1021/ic201083r10.1021/ic201083r ↗
84. 10.1021/cm303361s10.1021/cm303361s ↗
85. 10.1021/cm303564210.1021/cm3035642 ↗
86. 10.1021/cm502687p10.1021/cm502687p ↗
87. 10.1021/ja01507a00810.1021/ja01507a008 ↗
88. 10.1021/jp049107p10.1021/jp049107p ↗
89. 10.1126/science.117052410.1126/science.1170524 ↗
90. 10.1126/science.125992410.1126/science.1259924 ↗
91. 10.1039/C9TC03875B10.1039/C9TC03875B ↗
92. 10.1021/acs.nanolett.7b0204010.1021/acs.nanolett.7b02040 ↗
93. 10.1021/jz100830r10.1021/jz100830r ↗
94. 10.1021/jz401001510.1021/jz4010015 ↗
95. 10.1364/OE.18.00A41110.1364/OE.18.00A411 ↗
96. McCandless, B. E.; Shafarman, W. N. Chemical Surface Deposition of Ultra-Thin Semiconductors. U.S. Patent 6537845B1 August 30, 2001.