Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS 2 from the edges of mechanically exfoliated multilayer flakes of WSe 2 or Nb x Mo 1– x S 2 . In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS 2 on the exfoliated flakes. For the WSe 2 /MoS 2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the Nb x Mo 1– x S 2 /MoS 2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS 2 . The formation of a staggered gap band alignment of Nb x Mo 1– x S 2 /MoS 2 is also supported by first-principles calculations.