Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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Affiliations
School of Engineering, RMIT University, Melbourne, VIC 3001, Australia
School of Physics, The University of Melbourne, Parkville, VIC 3010, Australia
School of Science, RMIT University, Melbourne, VIC 3001, Australia
Department of Chemical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia
Department of Physics & IRIS Adlershof, Humboldt-Universität zu Berlin, 10099 Berlin, Germany
ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, VIC 3001, Australia
Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Department of Quantum Science and Technology, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
Centre for Materials and Surface Science and Department of Mathematical and Physical Sciences, La Trobe University, Melbourne, VIC 3086, Australia
ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, VIC 3001 Australia
Institute for Frontier Materials, Deakin University, Geelong, VIC 3216, Australia
RMIT Microscopy and Microanalysis Facility, STEM College, RMIT University, Melbourne, VIC 3001, Australia
School of Chemical Engineering, University of New South Wales (UNSW), Kensington, NSW 2031, Australia
Funding
Deakin University · Australian Research Council