DataVXACS NanoPaper
journal article·2019-11-26

Direct Observation of Band Gap Renormalization in Layered Indium Selenide

Zailan Zhang, Zhesheng Chen, Meryem Bouaziz, Christine Giorgetti, Hemian Yi, Jose Avila, Bingbing Tian, Abhay Shukla, Luca Perfetti, Dianyuan Fan, Ying Li, Azzedine Bendounan

ACS Nano· Volume 13· Issue 11
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Source abstract

Abstract

Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties. Two-dimensional indium selenide (InSe) semiconductor has attracted attention due to its direct band gap and ultrahigh mobility as a promising material for optoelectronic devices. In this work, we manipulate the electronic structure of InSe by in situ surface electron doping and obtain a significant band gap renormalization of ∼120 meV directly observed by high-resolution angle resolved photoemission spectroscopy. This moderate doping level (carrier concentration of 8.1 × 1012 cm–2) can be achieved by electrical gating in field effect transistors, demonstrating the potential to design of broad spectral response devices.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

Société Civile Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette 91192, France

Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS, CEA/DRF/IRAMIS, Institut Polytechnique de Paris, Palaiseau 91128, France

European Theoretical Spectroscopy Facility, Palaiseau 91128, France

Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, CNRS-UMR7590, Sorbonne Université, 4 Place Jussieu, Paris 75252, France

Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, Shenzhen University, Shenzhen 518060, China

Funding

Agence Nationale de la Recherche · Science and Technology Project of Shenzhen

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