journal article·2022-09-27Open access

Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP2S6–In4/3P2S6 Heterointerface

Marti Checa, Xin Jin, Ruben Millan-Solsona, Sabine M. Neumayer, Michael A. Susner, Michael A. McGuire, Andrew O’Hara, Gabriel Gomila, Petro Maksymovych, Sokrates T. Pantelides, Liam Collins

ACS Nano· Volume 16· Issue 9

Abstract

Van der Waals layered ferroelectrics, such as CuInP2S6 (CIPS), offer a versatile platform for miniaturization of ferroelectric device technologies. Control of the targeted composition and kinetics of CIPS synthesis enables the formation of stable self-assembled heterostructures of ferroelectric CIPS and nonferroelectric In4/3P2S6 (IPS). Here, we use quantitative scanning probe microscopy methods combined with density functional theory (DFT) to explore in detail the nanoscale variability in dynamic functional properties of the CIPS-IPS heterostructure. We report evidence of fast ionic transport which mediates an appreciable out-of-plane electromechanical response of the CIPS surface in the paraelectric phase. Further, we map the nanoscale dielectric and ionic conductivity properties as we thermally stimulate the ferroelectric-paraelectric phase transition, recovering the local dielectric behavior during this phase transition. Finally, aided by DFT, we reveal a substantial and tunable conductivity enhancement at the CIPS/IPS interface, indicating the possibility of engineering its interfacial properties for next generation device applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States

Institute of Physics and University of the Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

Institut de Bioenginyeria de Catalunya (IBEC), The Barcelona Institute of Science and Technology (BIST), c/Baldiri i Reixac 11-15, 08028 Barcelona, Spain

Departament d’Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Martí i Franqués 1, 08028 Barcelona, Spain

Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States

Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States

Funding

Basic Energy Sciences · European Regional Development Fund · Ministerio de Econom?a y Competitividad · UT-Battelle

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