Synthesis and Photoelectric Properties of Coaxial Schottky Junctions of ZnS and Carbon Nanotubes

One-dimensional (1D) nanostructures of the wide band gap semiconductors are promising building blocks for photoelectric nanodevices. However, some problems like strong 1D confinement largely hamper their applications. To avoid these problems, here, we provide another 1D configuration, in which an inner-wire coaxial Schottky junction exists, thus effectively avoiding the recombination of the photoexcited carriers. As an example, we produce ZnS/carbon nanotube nanocables with uniform morphologies by a two-step vapor deposition method and find that they have good conductance, obvious light response, and ohmic contacts with electrodes, avoiding the limitations of both the pristine nanomaterials. We believe that this configuration would be valuable for applying the 1D nanomaterials in photoelectronics.